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646687

Sigma-Aldrich

Silicon

wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

Sinônimo(s):

Silicon element

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About This Item

Fórmula linear:
Si
Número CAS:
7440-21-3
Peso molecular:
28.09
Número CE:
231-130-8
Número MDL:
MFCD00085311
Código UNSPSC:
12352300
ID de substância PubChem:
24883476
NACRES:
NA.23

Formulário

crystalline (cubic (a = 5.4037))
wafer (single side polished)

não contém

dopant

diâmetro × espessura

2 in. × 0.5 mm

p.e.

2355 °C (lit.)

pf

1410 °C (lit.)

densidade

2.33 g/mL at 25 °C (lit.)

propriedades semicondutoras

<100>, N-type

cadeia de caracteres SMILES

[Si]

InChI

1S/Si

chave InChI

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Descrição geral

Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.

Aplicação

  • Innovative Solutions for High-Performance Silicon Anodes in Lithium-Ion Batteries: Overcoming Challenges and Real-World Applications.: This article addresses the challenges and real-world applications of high-performance silicon anodes in lithium-ion batteries, presenting innovative solutions to enhance their efficiency (Khan et al., 2024).
  • Strain Engineering: Perfecting Freestanding Perovskite Oxide Fabrication.: This research focuses on strain engineering to improve the fabrication of freestanding perovskite oxides, which are crucial for various high-purity silicon applications in academia (Yun et al., 2024).

propriedades físicas

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 - 3000 Ωcm
Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″

Código de classe de armazenamento

13 - Non Combustible Solids

Classe de risco de água (WGK)

WGK 3

Ponto de fulgor (°F)

Not applicable

Ponto de fulgor (°C)

Not applicable

Equipamento de proteção individual

Eyeshields, Gloves, type N95 (US)

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Certificados de análise (COA)

Lot/Batch Number
MKCQ8581
MKCP4436
MKCG6024
MKCL9909
MKCF1043

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Molecular monolayers on silicon surfaces.
Lopinski GP and Wayner DDM.
Material Matters, 3(2), 38-38 (2008)
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
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Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
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To evaluate the outcome of nasolacrimal intubation as a primary treatment of congenital nasolacrimal duct obstruction (NLDO) in children up to 4 years of age. During the 3 years period from July 2008 to June 2011, in the Paediatric Ophthalmology
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