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343250

Sigma-Aldrich

Silicon

pieces, 99.95% trace metals basis

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About This Item

Fórmula linear:
Si
Número CAS:
7440-21-3
Peso molecular:
28.09
Número CE:
231-130-8
Número MDL:
MFCD00085311
Código UNSPSC:
12141911
ID de substância PubChem:
24861139
NACRES:
NA.23

Nível de qualidade

100

Ensaio

99.95% trace metals basis

Formulário

pieces

p.e.

2355 °C (lit.)

pf

1410 °C (lit.)

densidade

2.33 g/mL at 25 °C (lit.)

cadeia de caracteres SMILES

[Si]

InChI

1S/Si

chave InChI

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Categorias relacionadas

Código de classe de armazenamento

13 - Non Combustible Solids

Classe de risco de água (WGK)

WGK 3

Ponto de fulgor (°F)

Not applicable

Ponto de fulgor (°C)

Not applicable

Equipamento de proteção individual

Eyeshields, Gloves, type N95 (US)

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Certificados de análise (COA)

Lot/Batch Number
MKCM2063
MKCL0838
MKCJ1941
MKCF7364
MKBX4312V

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Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
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Global Trade Item Number

SKUGTIN
343250-50G4061826757895
343250-500G4061826757888

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