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Sigma-Aldrich

Silicon

pieces, 99.95% trace metals basis

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About This Item

Wzór liniowy:
Si
Numer CAS:
7440-21-3
Masa cząsteczkowa:
28.09
Numer WE:
231-130-8
Numer MDL:
MFCD00085311
Kod UNSPSC:
12352300
Identyfikator substancji w PubChem:
24861139
NACRES:
NA.23

Poziom jakości

100

Próba

99.95% trace metals basis

Postać

pieces

tw

2355 °C (lit.)

mp

1410 °C (lit.)

gęstość

2.33 g/mL at 25 °C (lit.)

ciąg SMILES

[Si]

InChI

1S/Si

Klucz InChI

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Kod klasy składowania

13 - Non Combustible Solids

Klasa zagrożenia wodnego (WGK)

WGK 3

Temperatura zapłonu (°F)

Not applicable

Temperatura zapłonu (°C)

Not applicable

Środki ochrony indywidualnej

Eyeshields, Gloves, type N95 (US)

Certyfikaty analizy (CoA)

Poszukaj Certyfikaty analizy (CoA), wpisując numer partii/serii produktów. Numery serii i partii można znaleźć na etykiecie produktu po słowach „seria” lub „partia”.

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Silicon lump, 25 mm max. lump size, weight 50 g, purity 99.999%

GF15703477

Silicon

Silicon wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

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646687

Silicon

Silicon rod, 100mm, diameter 2.0mm, crystalline, 100%

GF64686998

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Silicon powder, 45 max. part. size (micron), weight 100 g, high purity 99.998%

GF64953614

Silicon

Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
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