crystalline (cubic (a = 5.4037))
wafer (single side polished)
boron as dopant
3 in. × 0.5 mm
2355 °C (lit.)
1410 °C (lit.)
2.33 g/mL at 25 °C (lit.)
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Building and Engineering Micro/Nano Architectures of Single-Walled Carbon Nanotubes for Electronic Applications
Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes
Our photoresist kit was designed to have the necessary chemical components for each step in the lithographic process. The component materials are provided in pre-weighed quantities for your convenience. Etchants are available separately so that the proper etchant can be chosen for a variety of substrate choices.