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647535

Sigma-Aldrich

Silicon

wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

Sinonimo/i:

Silicon element

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About This Item

Formula condensata:
Si
Numero CAS:
7440-21-3
Peso molecolare:
28.09
Numero CE:
231-130-8
Numero MDL:
MFCD00085311
Codice UNSPSC:
12352300
ID PubChem:
24883543
NACRES:
NA.23

Stato

crystalline (cubic (a = 5.4037))
wafer (single side polished)

non contiene

dopant

diam. × spessore

3 in. × 0.5 mm

P. ebollizione

2355 °C (lit.)

Punto di fusione

1410 °C (lit.)

Densità

2.33 g/mL at 25 °C (lit.)

Caratteristiche del semiconduttore

<100>, N-type

Stringa SMILE

[Si]

InChI

1S/Si
XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Applicazioni

Silicon wafers are majorly used in electronics as substrate materials. They are also used in a variety of applications like solar cells, microelectronics, and other integrated circuits.

Proprietà fisiche

0 vortex defects. Etch pitch density (EPD) <100 cm-2. Resistivity 1,000- 2,300 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Codice della classe di stoccaggio

13 - Non Combustible Solids

Classe di pericolosità dell'acqua (WGK)

WGK 3

Punto d’infiammabilità (°F)

Not applicable

Punto d’infiammabilità (°C)

Not applicable

Dispositivi di protezione individuale

Eyeshields, Gloves, type N95 (US)

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Certificati d'analisi (COA)

Lot/Batch Number
MKCR0472
MKCQ0514
MKCN5974
MKCH2379
MKCG5810

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24.7% record efficiency HIT solar cell on thin silicon wafer
Taguchi M, et al.
IEEE journal of Photovoltaics, 4(1), 96-99 (2013)
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
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