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920932

Sigma-Aldrich

Monolayer hexagonal Boron Nitride (hBN) on Si/SiO2 wafer

diam. 100 mm (4 in.)

Sinonimo/i:

Boronitrene, Hexagonal boron nitride monolayer, Single-layer hexagonal boron nitride, White graphene

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About This Item

Formula empirica (notazione di Hill):
BN
Numero CAS:
10043-11-5
Peso molecolare:
24.82
Numero MDL:
MFCD00008279
Codice UNSPSC:
12352302
NACRES:
NA.23

Descrizione

Monolayer h-BN
hBN Coverage: 100% with sporadic adlayers
Bandgap: 5.97 eV
Raman Peak: 1370 /cm-1
Orientation: <1-0-0>
Metal Impurities: 1.00e10 – 5.00e10 (at/cm2)
Substrate
Type/Doping: P/B
Wafer Thickness : 500 ± 50 μm
Oxide Thickness: 300 nm
Resistivity: 1 – 10 (ohm/cm)

Livello qualitativo

100

Diametro

100 mm (4 in.)

Dimensione grani

>4 μm

Stringa SMILE

B#N

InChI

1S/BN/c1-2
PZNSFCLAULLKQX-UHFFFAOYSA-N

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Categorie correlate

Applicazioni

Monolayer hexagonal boron nitride (h-BN), also known as ″white graphene″, is a wide-bandgap 2D crystal (∼6 eV that can be tuned to ∼2 eV) with exceptional strength, large oxidation resistance at high temperatures, and optical functionalities. Among its potential applications are:
  • Two-dimensional electronics
  • Nanophotonic and other optoelectronic devices
  • Quantum communication and information science
  • Aerospace industry
  • MEMS and NEMS
  • Micro-/nano- actuators
  • Insulating/transparent coatings.

Stoccaggio e stabilità

To ensure the maximum shelf life of your hBN sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.

Codice della classe di stoccaggio

13 - Non Combustible Solids

Classe di pericolosità dell'acqua (WGK)

WGK 3

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Certificati d'analisi (COA)

Lot/Batch Number

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Monolayer to Bulk Properties of Hexagonal Boron Nitride.
Wickramaratne D, et al.
The Journal of Physical Chemistry C, 122(44), 25524-25529 (2018)
Xu-Qian Zheng et al.
Microsystems & nanoengineering, 3, 17038-17038 (2017-07-31)
Atomic layers of hexagonal boron nitride (h-BN) crystal are excellent candidates for structural materials as enabling ultrathin, two-dimensional (2D) nanoelectromechanical systems (NEMS) due to the outstanding mechanical properties and very wide bandgap (5.9 eV) of h-BN. In this work, we report
Kun Ba et al.
Scientific reports, 7, 45584-45584 (2017-04-04)
Monolayer hexagonal boron nitride (h-BN) possesses a wide bandgap of ~6 eV. Trimming down the bandgap is technically attractive, yet poses remarkable challenges in chemistry. One strategy is to topological reform the h-BN's hexagonal structure, which involves defects or grain boundaries

Global Trade Item Number

SKUGTIN
920932-1EA4065266281873

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