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Key Documents

343250

Sigma-Aldrich

Silicon

pieces, 99.95% trace metals basis

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About This Item

Formula condensata:
Si
Numero CAS:
Peso molecolare:
28.09
Numero CE:
Numero MDL:
Codice UNSPSC:
12141911
ID PubChem:
NACRES:
NA.23

Livello qualitativo

Saggio

99.95% trace metals basis

Forma fisica

pieces

P. eboll.

2355 °C (lit.)

Punto di fusione

1410 °C (lit.)

Densità

2.33 g/mL at 25 °C (lit.)

Stringa SMILE

[Si]

InChI

1S/Si
XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Codice della classe di stoccaggio

13 - Non Combustible Solids

Classe di pericolosità dell'acqua (WGK)

WGK 3

Punto d’infiammabilità (°F)

Not applicable

Punto d’infiammabilità (°C)

Not applicable

Dispositivi di protezione individuale

Eyeshields, Gloves, type N95 (US)


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Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW

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Technologies are an integral part of our lives and we rely on them for such things as communication, heating and cooling, transportation, and construction. Improvements to technologies have made what they do for us more precise, automated, efficient, and powerful.

Recent demand for electric and hybrid vehicles, coupled with a reduction in prices, has caused lithium-ion batteries (LIBs) to become an increasingly popular form of rechargeable battery technology.

In recent years, the price of tellurium, a key component in the bestperforming thermoelectric materials, has increased significantly, leading to the question, “Is it economically viable to produce thermoelectric generators on an industrial scale?

The price of tellurium, a key component in many thermoelectric materials, has risen in recent years, leading to the search for more cost-effective substitutes. This article presents silicide materials as a cheaper potential alternative.

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