Passa al contenuto
Merck
Tutte le immagini(1)

Key Documents

View All Documentation

647764

Sigma-Aldrich

Silicon

wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

Sinonimo/i:

Silicon element

Autenticatiper visualizzare i prezzi riservati alla tua organizzazione & contrattuali
Tutte le immagini(1)

About This Item

Formula condensata:
Si
Numero CAS:
7440-21-3
Peso molecolare:
28.09
Numero CE:
231-130-8
Numero MDL:
MFCD00085311
Codice UNSPSC:
12352300
ID PubChem:
24883547
NACRES:
NA.23

Forma fisica

crystalline (cubic (a = 5.4037))
wafer (single side polished)

Livello qualitativo

100

contiene

boron as dopant

diam. × spessore

3 in. × 0.5 mm

P. eboll.

2355 °C (lit.)

Punto di fusione

1410 °C (lit.)

Densità

2.33 g/mL at 25 °C (lit.)

Caratteristiche del semiconduttore

<100>, P-type

Stringa SMILE

[Si]

InChI

1S/Si
XUIMIQQOPSSXEZ-UHFFFAOYSA-N

Cerchi prodotti simili? Visita Guida al confronto tra prodotti

Proprietà fisiche

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ω•cm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Codice della classe di stoccaggio

13 - Non Combustible Solids

Classe di pericolosità dell'acqua (WGK)

WGK 3

Punto d’infiammabilità (°F)

Not applicable

Punto d’infiammabilità (°C)

Not applicable

Dispositivi di protezione individuale

Eyeshields, Gloves, type N95 (US)

Scegli una delle versioni più recenti:

Certificati d'analisi (COA)

Lot/Batch Number
MKCQ2413
MKCP6320
MKCN7711
MKCG6828
MKCD0543

Non trovi la versione di tuo interesse?

Se hai bisogno di una versione specifica, puoi cercare il certificato tramite il numero di lotto.

Cerca un COA

Possiedi già questo prodotto?

I documenti relativi ai prodotti acquistati recentemente sono disponibili nell’Archivio dei documenti.

Visita l’Archivio dei documenti

I clienti hanno visto anche

Slide 1 of 6

1 of 6

Gold coated silicon wafer 99.999% (Au), layer thickness 1000&#160;Å, 99.99% (Ti)

Sigma-Aldrich

643262

Gold coated silicon wafer

Silicon wafer (single side polished), &#60;111&#62;, N-type, contains phosphorus as dopant, diam. × thickness 2&#160;in. × 0.5&#160;mm

Sigma-Aldrich

647799

Silicon

Aldrich&#174; Negative Photoresist Kit I

Sigma-Aldrich

654892

Aldrich® Negative Photoresist Kit I

Silicon pieces, 99.95% trace metals basis

Sigma-Aldrich

343250

Silicon

Strontium titanate single crystal substrate, &#60;100&#62;

Sigma-Aldrich

634689

Strontium titanate

Gold beads, 1-6&#160;mm, 99.999% trace metals basis

Sigma-Aldrich

326542

Gold

Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Mariya Nazish Memon et al.
JPMA. The Journal of the Pakistan Medical Association, 62(12), 1329-1332 (2013-07-23)
To evaluate the outcome of nasolacrimal intubation as a primary treatment of congenital nasolacrimal duct obstruction (NLDO) in children up to 4 years of age. During the 3 years period from July 2008 to June 2011, in the Paediatric Ophthalmology
Min Joon Huang et al.
Journal of nanoscience and nanotechnology, 13(6), 3810-3817 (2013-07-19)
In this work, we demonstrated a silicon nanowire (SiNW) biosensing platform capable of simultaneously identifying different Dengue serotypes on a single sensing chip. Four peptide nucleic acids (PNAs), specific to each Dengue serotypes (DENV-1 to DENV-4), were spotted on different
Visualizza tutti i documenti correlati

Articoli

Building and Engineering Micro/Nano Architectures of Single-Walled Carbon Nanotubes for Electronic Applications

Building and Engineering Micro/Nano Architectures of Single-Walled Carbon Nanotubes for Electronic Applications

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes

Protocolli

Negative Photoresist Procedure

Negative Photoresist Procedure

Il team dei nostri ricercatori vanta grande esperienza in tutte le aree della ricerca quali Life Science, scienza dei materiali, sintesi chimica, cromatografia, discipline analitiche, ecc..

Contatta l'Assistenza Tecnica.