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647101

Sigma-Aldrich

Silicon

wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

Sinonimo/i:

Silicon element

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About This Item

Formula condensata:
Si
Numero CAS:
7440-21-3
Peso molecolare:
28.09
Numero CE:
231-130-8
Numero MDL:
MFCD00085311
Codice UNSPSC:
12352300
ID PubChem:
24883508
NACRES:
NA.23

Stato

crystalline (cubic (a = 5.4037))
wafer (single side polished)

Livello qualitativo

100

non contiene

dopant

diam. × spessore

2 in. × 0.5 mm

P. ebollizione

2355 °C (lit.)

Punto di fusione

1410 °C (lit.)

Densità

2.33 g/mL at 25 °C (lit.)

Caratteristiche del semiconduttore

<111>, N-type

Stringa SMILE

[Si]

InChI

1S/Si
XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Categorie correlate

Applicazioni


  • Silicon Photonics and Electronics: Discusses the integration of silicon photonics with electronics, relevant for developing high-performance computational devices, pertinent to material science and high-performance computing research (C Xiang et al., 2021).

  • Silicon Silicon pi Single Bond: Details the structural chemistry of silicon and its implications in molecular and material sciences, useful for chemists interested in silicon′s applications in nanotechnology and materials science (S Kyushin et al., 2020).

Proprietà fisiche

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 - 3000 Ωcm.
Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″

Codice della classe di stoccaggio

13 - Non Combustible Solids

Classe di pericolosità dell'acqua (WGK)

nwg

Punto d’infiammabilità (°F)

Not applicable

Punto d’infiammabilità (°C)

Not applicable

Dispositivi di protezione individuale

Eyeshields, Gloves, type N95 (US)

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Certificati d'analisi (COA)

Lot/Batch Number
MKCQ9223
MKCP9285
MKCN9097
MKCM9678
MKBZ8909V

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Sigma-Aldrich

634867

Silicon dioxide

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Sigma-Aldrich

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Gold coated silicon wafer

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Sigma-Aldrich

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Silicon

Tantalum foil, thickness 0.25&#160;mm, &#8805;99.9% trace metals basis

Sigma-Aldrich

262897

Tantalum

Aluminum oxide single crystal substrate, &#60;0001&#62;

Sigma-Aldrich

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Aluminum oxide

Strontium titanate single crystal substrate, &#60;100&#62;

Sigma-Aldrich

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Strontium titanate

Negative photoresist I

Sigma-Aldrich

651796

Negative photoresist I

Silicon nanopowder, &lt;100&#160;nm particle size (TEM), &#8805;98% trace metals basis

Sigma-Aldrich

633097

Silicon

Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
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Protocolli

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Global Trade Item Number

SKUGTIN
647101-5EA4061832730677
647101-1EA4061832730660

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