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634867

Sigma-Aldrich

Silicon dioxide

single crystal substrate, optical grade, 99.99% trace metals basis, L × W × thickness 10 mm × 10 mm × 0.5 mm

Sinonimo/i:

Cristobalite, Quartz, Sand, Silica

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About This Item

Formula condensata:
SiO2
Numero CAS:
60676-86-0
Peso molecolare:
60.08
Numero CE:
262-373-8
Numero MDL:
MFCD00011232
Codice UNSPSC:
12352303
ID PubChem:
24882697
NACRES:
NA.23

Grado

optical grade

Livello qualitativo

100

Saggio

99.99% trace metals basis

Forma fisica

solid

Durezza

7.0 mohs

Lungh. × largh. × spess.

10 mm × 10 mm × 0.5 mm

Indice di rifrazione

n20/D 1.544 (lit.)

Punto di fusione

1610 °C (lit.)

Temp. transizione

Tm 573.1 °C (phase change)

Densità

2.6 g/mL at 25 °C (lit.)
2.684 g/mL

Stringa SMILE

O=[Si]=O

InChI

1S/O2Si/c1-3-2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N

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Categorie correlate

Applicazioni

SiO2 is majorly used as a substrate material with excellent thermo-mechanical properties in a variety of applications which include:
  • vapour deposition
  • phase deposition
  • atomic force microscopy probes(AFM)
  • spin coating
  • electronic based devices

Caratteristiche e vantaggi

An excellent substrate for microwave filters for applications in the wireless communication arena.

Stato fisico

Crystalline, hexagonal (a = 4.914 Å, c = 5.405 Å)

Altre note

specific heat = 0.18 cal/g; thermoelectric constant = 1200μV/°C @ 300 °C; thermal conductivity = 0.0033 cal/cm°C; themal expansion (x10-6) = α11: 13.71, α33: 7.48; Q value = 1.8 × 106 min; acoustic velocity, SAW = 3160 m/sec; frequency constant, BAW = 1661 kHz/mm; piezoelectric coupling = K2 BAW: 0.65%, SAW: 0.14%

Codice della classe di stoccaggio

13 - Non Combustible Solids

Classe di pericolosità dell'acqua (WGK)

nwg

Punto d’infiammabilità (°F)

Not applicable

Punto d’infiammabilità (°C)

Not applicable

Dispositivi di protezione individuale

dust mask type N95 (US), Eyeshields, Gloves

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Certificati d'analisi (COA)

Lot/Batch Number
BCCD6553
BCCC0430
BCCB3022
BCBX5076
BCBR6518V

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Sigma-Aldrich

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Sigma-Aldrich

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Strontium titanate

Silicon wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

Sigma-Aldrich

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Silicon

Silicon dioxide purum p.a., acid purified, sand

Sigma-Aldrich

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Silicon dioxide

Monolayer graphene film 1 cm x 1 cm on SiO2/Si substrate, avg. no. of layers, 1

Sigma-Aldrich

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Monolayer graphene film

Silicon wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

Sigma-Aldrich

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Silicon

Electrical and optical properties of ZnO transparent conducting films by the sol-gel method.
Lee J, et al.
Journal of Crystal Growth, 247(1-2), 119-125 (2003)
Growth model of bamboo-shaped carbon nanotubes by thermal chemical vapor deposition.
Lee CJ and Park J
Applied Physics Letters, 77(21), 3397-3399 (2000)
Measurement of the adhesion force between carbon nanotubes and a silicon dioxide substrate.
Whittaker JD, et al.
Nano Letters, 6(5), 953-957 (2006)
Oxygen-aided synthesis of polycrystalline graphene on silicon dioxide substrates.
Chen J, et al.
Journal of the American Chemical Society, 133(44), 17548-17551 (2011)
The effect of calcination temperature on the surface microstructure and photocatalytic activity of TiO2 thin films prepared by liquid phase deposition.
Yu J, et al.
The Journal of Physical Chemistry B, 107(50), 13871-13879 (2003)
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