Skip to Content
MilliporeSigma
All Photos(1)

Key Documents

648663

Sigma-Aldrich

Bis(ethylcyclopentadienyl)ruthenium(II)

Synonym(s):

Diethylruthenocene

Sign Into View Organizational & Contract Pricing


About This Item

Linear Formula:
C7H9RuC7H9
CAS Number:
Molecular Weight:
287.36
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23

form

liquid

Quality Level

composition

Ru, 33.9-36.4% gravimetric

reaction suitability

core: ruthenium
reagent type: catalyst

refractive index

n20/D 1.5870 (lit.)

bp

100 °C/0.01 mmHg (lit.)

mp

6 °C (lit.)

density

1.3412 g/mL at 25 °C (lit.)

storage temp.

−20°C

SMILES string

[Ru].CC[C]1[CH][CH][CH][CH]1.CC[C]2[CH][CH][CH][CH]2

InChI

1S/2C7H9.Ru/c2*1-2-7-5-3-4-6-7;/h2*3-6H,2H2,1H3;

InChI key

VLTZUJBHIUUHIK-UHFFFAOYSA-N

Looking for similar products? Visit Product Comparison Guide

Application

Bis(ethylcyclopentadienyl)ruthenium(II) (Ru(EtCp)2), a metal organic is used as an atomic layer deposition precursor for Ru thin filmsand well-aligned RuO2 nanorods.

accessory

Product No.
Description
Pricing

pictograms

Exclamation mark

signalword

Warning

Hazard Classifications

Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3

target_organs

Respiratory system

Storage Class

10 - Combustible liquids

wgk_germany

WGK 3

flash_point_f

199.9 °F - closed cup

flash_point_c

> 93.3 °C - closed cup

ppe

Eyeshields, Gloves, type ABEK (EN14387) respirator filter


Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

Growth and characterization of the coexistence of vertically aligned and twinned V-shaped RuO2 nanorods on nanostructural TiO2 template
Chen CA, et al.
J. Alloy Compounds, 485(1-2), 524-528 (2009)
In-situ real-time ellipsometric investigations during the atomic layer deposition of ruthenium: A process development from [(ethylcyclopentadienyl)(pyrrolyl) ruthenium] and molecular oxygen.
Knaut M, et al.
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, And Films, 30(1), 01A151-01A151 (2012)
ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems.
Waechtler T, et al.
Microelectronic Engineering, 88(5), 684-689 (2011)
Thermal atomic layer deposition (ALD) of Ru films for Cu direct plating.
Choi SH, et al.
Journal of the Electrochemical Society, 158(6), D351-D356 (2011)

Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

Contact Technical Service