553468

Sigma-Aldrich

Tris(tert-butoxy)silanol

99.999%

Synonym(s):
TBS
Linear Formula:
((CH3)3CO)3SiOH
CAS Number:
Molecular Weight:
264.43
MDL number:
PubChem Substance ID:
NACRES:
NA.23

Quality Level

assay

99.999%

form

solid

bp

205-210 °C (lit.)

mp

63-65 °C (lit.)

SMILES string

CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C

InChI

1S/C12H28O4Si/c1-10(2,3)14-17(13,15-11(4,5)6)16-12(7,8)9/h13H,1-9H3

InChI key

HLDBBQREZCVBMA-UHFFFAOYSA-N

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General description

Tris(tert-butoxy)silanol can react with various metal alkyl amides to act as precursors for vapor deposition metal silicates. It also acts as a suitable precursor for deposition of silica.

Application

Tris(tert-alkoxy)silanols reacts with tetrakis(dimethylamino)-hafnium vapor(Hf(N(CH3)2)4) for vapor phase deposition of hafnium silicate glass films. Tris(tert-butoxy)silanol is used for atomic layer deposition (ALD) of highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates.

Packaging

5, 25 g in glass bottle

storage_class_code

13 - Non Combustible Solids

WGK Germany

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US),Eyeshields,Gloves

Certificate of Analysis

Certificate of Origin

Vapor deposition of metal oxides and silicates: Possible gate insulators for future microelectronics.
Gordon G, et al.
Chemistry of Materials, 13(8), 2463-2464 (2001)
Rapid vapor deposition of highly conformal silica nanolaminates.
Hausmann D, et al.
Science, 298(5592), 402-406 null
Rapid SiO2 Atomic Layer Deposition Using Tris(tert-pentoxy)silanol.
Burton B, et al.
Chemistry of Materials, 20, 7031-7043 (2008)
Pedro A Dionísio et al.
Neurobiology of aging, 36(1), 228-240 (2014-12-03)
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