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647535

Sigma-Aldrich

Silicon

wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

동의어(들):

Silicon element

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About This Item

Linear Formula:
Si
CAS Number:
7440-21-3
Molecular Weight:
28.09
EC Number:
231-130-8
MDL number:
MFCD00085311
UNSPSC 코드:
12352300
PubChem Substance ID:
24883543
NACRES:
NA.23

형태

crystalline (cubic (a = 5.4037))
wafer (single side polished)

Quality Level

100

미포함

dopant

직경 × 두께

3 in. × 0.5 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

반도체 특성

<100>, N-type

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

유사한 제품을 찾으십니까? 방문 제품 비교 안내

애플리케이션

Silicon wafers are majorly used in electronics as substrate materials. They are also used in a variety of applications like solar cells, microelectronics, and other integrated circuits.

물리적 특성

0 vortex defects. Etch pitch density (EPD) <100 cm-2. Resistivity 1,000- 2,300 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Storage Class Code

13 - Non Combustible Solids

WGK

WGK 3

Flash Point (°F)

Not applicable

Flash Point (°C)

Not applicable

개인 보호 장비

Eyeshields, Gloves, type N95 (US)

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시험 성적서(COA)

Lot/Batch Number
MKCR0472
MKCQ0514
MKCN5974
MKCH2379
MKCG5810

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특정 버전이 필요한 경우 로트 번호나 배치 번호로 특정 인증서를 찾을 수 있습니다.

COA 검색

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24.7% record efficiency HIT solar cell on thin silicon wafer
Taguchi M, et al.
IEEE journal of Photovoltaics, 4(1), 96-99 (2013)
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
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JPMA. The Journal of the Pakistan Medical Association, 62(12), 1329-1332 (2013-07-23)
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문서

Molecular Monolayers on Silicon Surfaces

This article briefly reviews the methods and mechanisms for the formation of molecular monolayers on silicon surfaces, the properties of these monolayers and current perspectives regarding their application in molecular electronic and sensing applications.

Dye-Sensitized and Perovskite Solar Cells: Interface Engineering by Atomic Layer Deposition

Since the demonstration of the first practical solar cell 60 years ago, research on novel materials, improved solar cell design and structure, and innovative manufacturing processes have all contributed to a continuous increase in the efficiency of photovoltaic (PV) devices.

FePt Nanogranular films for high density heat-assisted magnetic recording

A hard disk drive (HDD) is a data storage device that stores digital information by magnetizing nanosized magnets on flat disks and retrieves data by sensing the resulting magnetic field.

Building and Engineering Micro/Nano Architectures of Single-Walled Carbon Nanotubes for Electronic Applications

Building and Engineering Micro/Nano Architectures of Single-Walled Carbon Nanotubes for Electronic Applications

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