콘텐츠로 건너뛰기
Merck
모든 사진(1)

Key Documents

View All Documentation

647764

Sigma-Aldrich

Silicon

wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

동의어(들):

Silicon element

로그인조직 및 계약 가격 보기
모든 사진(1)

About This Item

Linear Formula:
Si
CAS Number:
7440-21-3
Molecular Weight:
28.09
EC Number:
231-130-8
MDL number:
MFCD00085311
UNSPSC 코드:
12352300
PubChem Substance ID:
24883547
NACRES:
NA.23

형태

crystalline (cubic (a = 5.4037))
wafer (single side polished)

Quality Level

100

포함

boron as dopant

직경 × 두께

3 in. × 0.5 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

반도체 특성

<100>, P-type

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

유사한 제품을 찾으십니까? 방문 제품 비교 안내

물리적 특성

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ω•cm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Storage Class Code

13 - Non Combustible Solids

WGK

WGK 3

Flash Point (°F)

Not applicable

Flash Point (°C)

Not applicable

개인 보호 장비

Eyeshields, Gloves, type N95 (US)

가장 최신 버전 중 하나를 선택하세요:

시험 성적서(COA)

Lot/Batch Number
MKCQ2413
MKCP6320
MKCN7711
MKCG6828
MKCD0543

적합한 버전을 찾을 수 없으신가요?

특정 버전이 필요한 경우 로트 번호나 배치 번호로 특정 인증서를 찾을 수 있습니다.

COA 검색

이 제품을 이미 가지고 계십니까?

문서 라이브러리에서 최근에 구매한 제품에 대한 문서를 찾아보세요.

문서 라이브러리 방문

Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Mariya Nazish Memon et al.
JPMA. The Journal of the Pakistan Medical Association, 62(12), 1329-1332 (2013-07-23)
To evaluate the outcome of nasolacrimal intubation as a primary treatment of congenital nasolacrimal duct obstruction (NLDO) in children up to 4 years of age. During the 3 years period from July 2008 to June 2011, in the Paediatric Ophthalmology
Min Joon Huang et al.
Journal of nanoscience and nanotechnology, 13(6), 3810-3817 (2013-07-19)
In this work, we demonstrated a silicon nanowire (SiNW) biosensing platform capable of simultaneously identifying different Dengue serotypes on a single sensing chip. Four peptide nucleic acids (PNAs), specific to each Dengue serotypes (DENV-1 to DENV-4), were spotted on different
모든 관련된 서류 보기

문서

Building and Engineering Micro/Nano Architectures of Single-Walled Carbon Nanotubes for Electronic Applications

Building and Engineering Micro/Nano Architectures of Single-Walled Carbon Nanotubes for Electronic Applications

프로토콜

Negative Photoresist Procedure

Negative Photoresist Procedure

자사의 과학자팀은 생명 과학, 재료 과학, 화학 합성, 크로마토그래피, 분석 및 기타 많은 영역을 포함한 모든 과학 분야에 경험이 있습니다..

고객지원팀으로 연락바랍니다.