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Merck
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주요 문서

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553468

Sigma-Aldrich

Tris(tert-butoxy)silanol

99.999%

동의어(들):

TBS

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모든 사진(4)

About This Item

Linear Formula:
((CH3)3CO)3SiOH
CAS Number:
18166-43-3
Molecular Weight:
264.43
MDL number:
MFCD00271024
UNSPSC 코드:
12352103
PubChem Substance ID:
24879332
NACRES:
NA.23

Quality Level

100

분석

99.999%

형태

solid

bp

205-210 °C (lit.)

mp

63-65 °C (lit.)

SMILES string

CC(C)(C)O[Si](O)(OC(C)(C)C)OC(C)(C)C

InChI

1S/C12H28O4Si/c1-10(2,3)14-17(13,15-11(4,5)6)16-12(7,8)9/h13H,1-9H3

InChI key

HLDBBQREZCVBMA-UHFFFAOYSA-N

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관련 카테고리

일반 설명

Tris(tert-butoxy)silanol can react with various metal alkyl amides to act as precursors for vapor deposition metal silicates. It also acts as a suitable precursor for deposition of silica.

애플리케이션

Tris(tert-alkoxy)silanols reacts with tetrakis(dimethylamino)-hafnium vapor(Hf(N(CH3)2)4) for vapor phase deposition of hafnium silicate glass films. Tris(tert-butoxy)silanol is used for atomic layer deposition (ALD) of highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates.

Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Flash Point (°F)

Not applicable

Flash Point (°C)

Not applicable

개인 보호 장비

Eyeshields, Gloves, type N95 (US)

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시험 성적서(COA)

Lot/Batch Number
SHBL5061
SHBL0342
SHBK7740
SHBK3444
SHBK3445

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특정 버전이 필요한 경우 로트 번호나 배치 번호로 특정 인증서를 찾을 수 있습니다.

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문서 라이브러리 방문

Rapid vapor deposition of highly conformal silica nanolaminates.
Hausmann D, et al.
Science, 298(5592), 402-406 null
Rapid SiO2 Atomic Layer Deposition Using Tris(tert-pentoxy)silanol.
Burton B, et al.
Chemistry of Materials, 20, 7031-7043 (2008)
Vapor deposition of metal oxides and silicates: Possible gate insulators for future microelectronics.
Gordon G, et al.
Chemistry of Materials, 13(8), 2463-2464 (2001)
Jonathan Stewart et al.
Modern pathology : an official journal of the United States and Canadian Academy of Pathology, Inc, 28(3), 428-436 (2014-09-27)
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Neurobiology of aging, 36(1), 228-240 (2014-12-03)
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