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Key Documents

215120

Sigma-Aldrich

Silicon tetrachloride

99%

동의어(들):

STC, Tetrachlorosilane

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About This Item

Linear Formula:
SiCl4
CAS Number:
Molecular Weight:
169.90
EC Number:
MDL number:
UNSPSC 코드:
12352103
PubChem Substance ID:
NACRES:
NA.23

vapor density

5.86 (vs air)

Quality Level

vapor pressure

420 mmHg ( 37.7 °C)

분석

99%

형태

liquid

반응 적합성

core: silicon

bp

57.6 °C (lit.)

mp

−70 °C (lit.)

density

1.483 g/mL at 25 °C (lit.)

SMILES string

Cl[Si](Cl)(Cl)Cl

InChI

1S/Cl4Si/c1-5(2,3)4

InChI key

FDNAPBUWERUEDA-UHFFFAOYSA-N

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일반 설명

Silicon tetrachloride (SiCl4) is an inorganic compound. It′s crystal structure is similar to that of carbon tetrachloride (CCl4). SiCl4 can be synthesized by the chlorination of silicon compounds (e.g. Mg2Si, SiC, SiO2/C).

애플리케이션

SiCl4 may be used;
  • in the preparation of high purity silicon, high purity silicon derived from silicon tetrachloride may find major applications in the semiconductors industry and in photovoltaic cells.
  • to dealuminate zeolite, mordenite.
  • as a coupling agent for the synthesis of amine from carboxylic acid and an amide.
  • in the synthesis of nanosilica.

픽토그램

Skull and crossbonesCorrosion

신호어

Danger

유해 및 위험 성명서

Hazard Classifications

Acute Tox. 3 Inhalation - Acute Tox. 3 Oral - Eye Dam. 1 - Skin Corr. 1A - STOT SE 3

표적 기관

Respiratory system

보충제 위험성

Storage Class Code

6.1D - Non-combustible acute toxic Cat.3 / toxic hazardous materials or hazardous materials causing chronic effects

WGK

WGK 1

Flash Point (°F)

Not applicable

Flash Point (°C)

Not applicable

개인 보호 장비

Faceshields, Gloves, Goggles


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시험 성적서(COA)

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문서 라이브러리 방문

이미 열람한 고객

Slide 1 of 1

1 of 1

Zeolites treated with silicon tetrachloride vapour. IV. Acidity.
Anderson MW and Klinowski J
Zeolites, 6(6), 455-466 (1986)
Using hydrolysis of silicon tetrachloride to prepare highly dispersed precipitated nanosilica
Xiao Y, et al.
Chemical Engineering Journal, 283(1), 1-8 (2016)
Silicon tetrachloride as a coupling reagent for amide formation
Chan TH and Wong LTL
The Journal of Organic Chemistry, 34(9), 2766-2767 (1969)
Verma NK , et al.
Comprehensive Chemistry XI null
Dealumination of mordenite using silicon tetrachloride vapour
Klinowski J, et al.
Zeolites, 3(1), 5-7 (1983)

문서

atomic layer deposition (ALD), microelectronics, Mo:Al2O3 films, nanocomposite coating, photovoltaics, semiconductor devices, W:Al2O3 films, composite films, layer-by-layer

Spin-based electronic (spintronic) devices offer significant improvement to the limits of conventional charge-based memory and logic devices which suffer from high power usage, leakage current, performance saturation, and device complexity.

The properties of many devices are limited by the intrinsic properties of the materials that compose them.

자사의 과학자팀은 생명 과학, 재료 과학, 화학 합성, 크로마토그래피, 분석 및 기타 많은 영역을 포함한 모든 과학 분야에 경험이 있습니다..

고객지원팀으로 연락바랍니다.