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アッセイ
99.99% trace metals basis
形状
powder
反応適合性
core: yttrium
直径×厚み
2.00 in. × 0.25 in.
mp
2410 °C (lit.)
密度
5.01 g/mL at 25 °C (lit.)
SMILES記法
O=[Y]O[Y]=O
InChI
1S/3O.2Y
InChI Key
SIWVEOZUMHYXCS-UHFFFAOYSA-N
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アプリケーション
Yttrium oxide sputtering target can be used for physical vapor deposition of thin films of yttria stabilized zirconia layers for IT-SOFC. Yttrium containing films are used as thermal barrier and protective coatings in thermoelectric devices, rare earth doped yttrium oxide films are studied for phosphor applications.
保管分類コード
13 - Non Combustible Solids
WGK
WGK 1
引火点(°F)
Not applicable
引火点(℃)
Not applicable
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資料
Spin-based electronic (spintronic) devices offer significant improvement to the limits of conventional charge-based memory and logic devices which suffer from high power usage, leakage current, performance saturation, and device complexity.
Spin-based electronic (spintronic) devices offer significant improvement to the limits of conventional charge-based memory and logic devices which suffer from high power usage, leakage current, performance saturation, and device complexity.
The properties of many devices are limited by the intrinsic properties of the materials that compose them.
ライフサイエンス、有機合成、材料科学、クロマトグラフィー、分析など、あらゆる分野の研究に経験のあるメンバーがおります。.
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