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647675

Sigma-Aldrich

硅

wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm

别名:

Silicon element

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About This Item

线性分子式:
Si
CAS号:
7440-21-3
分子量:
28.09
MDL號碼:
MFCD00085311
分類程式碼代碼:
12352300
PubChem物質ID:
24883416
NACRES:
NA.23

形狀

crystalline (cubic (a = 5.4037))
wafer (single side polished)

品質等級

100

包含

boron as dopant

直徑× 厚度

2 in. × 0.5 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

密度

2.33 g/mL at 25 °C (lit.)

半導體屬性

<100>, P-type

SMILES 字串

[Si]

InChI

1S/Si

InChI 密鑰

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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應用

<100> Silicon wafer may be used as a substrate for the epitaxial growth of SiC, and TiN thin films.

包裝

1EA refers to 1 wafer and 5EA refers to 5 wafers

物理性質

氧含量：≤ 1~1.8×1018/cm3；碳含量：≤ 5×1016/cm3；晶棒直径：1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 10-3 - 40Ω-cm

儲存類別代碼

13 - Non Combustible Solids

水污染物質分類（WGK）

nwg

閃點（°F）

Not applicable

閃點（°C）

Not applicable

個人防護裝備

Eyeshields, Gloves, type N95 (US)

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number
MKCN7297
MKCL8717
MKCJ1312
MKCD9157
MKCC8060

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Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition.
Narayan J, et al.
Applied Physics Letters, 61(11), 1290-1292 (1992)
Epitaxial growth of 3C?SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition.
Zorman CA, et al.
Journal of Applied Physics, 78(8), 193-198 (2014)
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
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Building and Engineering Micro/Nano Architectures of Single-Walled Carbon Nanotubes for Electronic Applications

Building and Engineering Micro/Nano Architectures of Single-Walled Carbon Nanotubes for Electronic Applications

实验方案

Negative Photoresist Procedure

Our photoresist kit was designed to have the necessary chemical components for each step in the lithographic process. The component materials are provided in pre-weighed quantities for your convenience. Etchants are available separately so that the proper etchant can be chosen for a variety of substrate choices.

Global Trade Item Number

货号GTIN
647675-1EA4061832731025
647675-5EA4061832731032

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