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product name
R2R Monolayer small grain CVD graphene on silicon wafer, 4 in diameter, avg. no. of layers, 1
品質等級
描述
Growth method: roll-to-roll CVD
Wafer: SiO2 (300nm) Si
Number of layer: Monolayer
Raman intensity 2D/G: ≥1.5
特點
avg. no. of layers 1
薄層電阻
240 Ω/sq ±10%
尺寸
5 μm × 5 μm ± 10%, grain size
表面覆盖率
surface coverage >98%
透射率
>97%
半導體屬性
(mobility>1500 cm2/V·s) (Hall effect measurements)
一般說明
Be cautious not to drop
Keep away from contamination, heat, dust and flame etc.
Keep away from contamination, heat, dust and flame etc.
Roll-to-roll, high-quality, monolayer CVD graphene with small grain size (∼5μm2) on silicon wafer, 4 inch diameter.
應用
Our Roll-to-Roll CVD graphene products are true monolayer high quality graphene, fabricated inside a Cleanroom, heavily monitored and QC to assure high reproducibility.
The roll-to-roll process allows continuous, large scale graphene production.
This small grain size product is made by transferring roll-to-roll CVD graphene onto silicon wafer. It is ready-to-use with low sheet resistance, and would enable unmatched reproducibility and allow high performance for CVD graphene based cell culture scaffold, biosensors and chemically gated sensors.
The roll-to-roll process allows continuous, large scale graphene production.
This small grain size product is made by transferring roll-to-roll CVD graphene onto silicon wafer. It is ready-to-use with low sheet resistance, and would enable unmatched reproducibility and allow high performance for CVD graphene based cell culture scaffold, biosensors and chemically gated sensors.
儲存和穩定性
Avoid direct sun light, avoid high temperature, avoid high humidity, and avoid dust.
法律資訊
Product of LG Electronics, R&D use only
儲存類別代碼
11 - Combustible Solids
水污染物質分類(WGK)
WGK 3
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Although graphene/stem cell-based tissue engineering has recently emerged and has promisingly and progressively been utilized for developing one of the most effective regenerative nanomedicines, it suffers from low differentiation efficiency, low hybridization after transplantation and lack of appropriate scaffolds required
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Chemical vapor deposition (CVD) is considered to be an efficient method for fabricating large-area and high-quality graphene films due to its excellent controllability and scalability. Great efforts have been made to control the growth of graphene to achieve large domain
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