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647675

Sigma-Aldrich

Silicon

wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm

Sinonimo/i:

Silicon element

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About This Item

Formula condensata:
Si
Numero CAS:
7440-21-3
Peso molecolare:
28.09
Numero MDL:
MFCD00085311
Codice UNSPSC:
12352300
ID PubChem:
24883416
NACRES:
NA.23

Forma fisica

crystalline (cubic (a = 5.4037))
wafer (single side polished)

Livello qualitativo

100

contiene

boron as dopant

diam. × spessore

2 in. × 0.5 mm

P. eboll.

2355 °C (lit.)

Punto di fusione

1410 °C (lit.)

Densità

2.33 g/mL at 25 °C (lit.)

Caratteristiche del semiconduttore

<100>, P-type

Stringa SMILE

[Si]

InChI

1S/Si
XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Categorie correlate

Applicazioni

<100> Silicon wafer may be used as a substrate for the epitaxial growth of SiC, and TiN thin films.

Confezionamento

1EA refers to 1 wafer and 5EA refers to 5 wafers

Proprietà fisiche

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ω•cm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Codice della classe di stoccaggio

13 - Non Combustible Solids

Classe di pericolosità dell'acqua (WGK)

nwg

Punto d’infiammabilità (°F)

Not applicable

Punto d’infiammabilità (°C)

Not applicable

Dispositivi di protezione individuale

Eyeshields, Gloves, type N95 (US)

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Certificati d'analisi (COA)

Lot/Batch Number
MKCN7297
MKCL8717
MKCJ1312
MKCD9157
MKCC8060

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Silicon dioxide single crystal substrate, optical grade, 99.99% trace metals basis, L × W × thickness 10&#160;mm × 10&#160;mm × 0.5&#160;mm

Sigma-Aldrich

634867

Silicon dioxide

Gold coated silicon wafer 99.999% (Au), layer thickness 1000&#160;Å, 99.99% (Ti)

Sigma-Aldrich

643262

Gold coated silicon wafer

Silver wire, diam. 2.0&#160;mm, &#8805;99.99% trace metals basis

Sigma-Aldrich

267430

Silver

Indium foil, thickness 1.0&#160;mm, 99.999% trace metals basis

Sigma-Aldrich

357278

Indium

Indium tin oxide coated glass slide, square surface resistivity 8-12&#160;&#937;/sq

Sigma-Aldrich

703192

Indium tin oxide coated glass slide, square

Gold beads, 1-6&#160;mm, 99.999% trace metals basis

Sigma-Aldrich

326542

Gold

Negative photoresist I

Sigma-Aldrich

651796

Negative photoresist I

Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition.
Narayan J, et al.
Applied Physics Letters, 61(11), 1290-1292 (1992)
Epitaxial growth of 3C?SiC films on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition.
Zorman CA, et al.
Journal of Applied Physics, 78(8), 193-198 (2014)
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
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