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203815

Sigma-Aldrich

Molybdenum(VI) oxide

99.97% trace metals basis

Sinônimo(s):

Molybdenum trioxide

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About This Item

Fórmula linear:
MoO3
Número CAS:
1313-27-5
Peso molecular:
143.94
Número CE:
215-204-7
Número MDL:
MFCD00003469
Código UNSPSC:
12352303
eCl@ss:
38180807
ID de substância PubChem:
24852067
NACRES:
NA.23

Ensaio

99.97% trace metals basis

Formulário

powder

pf

795 °C (lit.)

aplicação(ões)

battery manufacturing

cadeia de caracteres SMILES

O=[Mo](=O)=O

InChI

1S/Mo.3O

chave InChI

JKQOBWVOAYFWKG-UHFFFAOYSA-N

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Descrição geral

Molybdenum(VI) oxide, also known as molybdenum trioxide, is a compound of molybdenum and oxygen with the approximate chemical formula of MoO3. Typically, it a white or light yellow powder, although molybdenum(VI) oxide can adopt a high concentration of defects including oxygen vacancies that impart a bluish or greenish color. Molybdenum(VI) oxide has a high melting point of 2,620 °C. Chemically, molybdenum(VI) oxide is a strong oxidizing agent and has a high work function. Consequently, it is used as a catalyst in chemical reactions and as a starting material to produce other molybdenum compounds. In addition, it is added to pigments, glasses, lubricants, and plastics.

Aplicação

Precursor to LAMOX fast ion conductors and superconductors.
Used in the solid state synthesis of a remarkable ternary, reduced molybdenum oxide, Pr4Mo9O18, whose structure contains previously unknown Mo7, Mo13 and Mo19 clusters. The new cluster product is a small band gap semiconductor.
Used in the solid state synthesis of a remarkable ternary, reduced molybdenum oxide, Pr4Mo9O18, whose structure contains previously unknown Mo7, Mo13and Mo19 clusters. The new cluster product is a small band gap semiconductor.

Pictogramas

Health hazardExclamation mark
GHS08,GHS07

Palavra indicadora

Warning

Frases de perigo

H319,H335,H351

Classificações de perigo

Carc. 2 - Eye Irrit. 2 - STOT SE 3

Órgãos-alvo

Respiratory system

Código de classe de armazenamento

11 - Combustible Solids

Classe de risco de água (WGK)

WGK 1

Ponto de fulgor (°F)

Not applicable

Ponto de fulgor (°C)

Not applicable

Equipamento de proteção individual

dust mask type N95 (US), Eyeshields, Faceshields, Gloves

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Certificados de análise (COA)

Lot/Batch Number
MKBZ5889V
MKBX5884V
MKBW5348V
MKBR9648V
MKBQ8744V

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Sigma-Aldrich

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Patrick R Brown et al.
Nano letters, 11(7), 2955-2961 (2011-06-15)
The ability to engineer interfacial energy offsets in photovoltaic devices is one of the keys to their optimization. Here, we demonstrate that improvements in power conversion efficiency may be attained for ZnO/PbS heterojunction quantum dot photovoltaics through the incorporation of
Seiichiro Murase et al.
Advanced materials (Deerfield Beach, Fla.), 24(18), 2459-2462 (2012-04-11)
An MoO(3) film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO(3) anode buffer layer is comparable to
Design of transparent anodes for resonant cavity enhanced light harvesting in organic solar cells.
Nicholas P Sergeant et al.
Advanced materials (Deerfield Beach, Fla.), 24(6), 728-732 (2012-01-04)
Claudio Girotto et al.
ACS applied materials & interfaces, 3(9), 3244-3247 (2011-08-13)
We report on a sol-gel-based technique to fabricate MoO(3) thin films as a hole-injection layer for solution-processed or thermally evaporated organic solar cells. The solution-processed MoO(3) (sMoO(3)) films are demonstrated to have equal performance to hole-injection layers composed of either
Yu-Zhan Wang et al.
The Journal of chemical physics, 134(3), 034706-034706 (2011-01-26)
The electronic structures at the MoO(3)∕Co interface were investigated using synchrotron-based ultraviolet and x-ray photoelectron spectroscopy. It was found that interfacial chemical reactions lead to the reduction of Mo oxidation states and the formation of Co-O bonds. These interfacial chemical
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