Direkt zum Inhalt
Merck
Alle Fotos(1)

Key Documents

View All Documentation

651486

Sigma-Aldrich

Galliumarsenid

(single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm

Synonym(e):

Gallium monoarsenide

Anmeldenzur Ansicht organisationsspezifischer und vertraglich vereinbarter Preise
Alle Fotos(1)

About This Item

Lineare Formel:
GaAs
CAS-Nummer:
1303-00-0
Molekulargewicht:
144.64
EG-Nummer:
215-114-8
MDL-Nummer:
MFCD00011017
UNSPSC-Code:
12352300
PubChem Substanz-ID:
24883832
NACRES:
NA.23

Qualitätsniveau

100

Form

(single crystal substrate)

Widerstandsfähigkeit

≥1E7 Ω-cm

Durchm. × Dicke

2 in. × 0.5 mm

Dichte

5.31 g/mL at 25 °C (lit.)

Halbleitereigenschaften

<100>

SMILES String

[Ga]#[As]

InChI

1S/As.Ga

InChIKey

JBRZTFJDHDCESZ-UHFFFAOYSA-N

Suchen Sie nach ähnlichen Produkten? Aufrufen Leitfaden zum Produktvergleich

Verwandte Kategorien

Physikalische Eigenschaften

Mobility >=4500 cm2 · V-1 · S-1
Undoped (Si-type semiconductor), EPD < 5 × 104 cm-2, growth technique = LEC & HB

Physikalische Form

cubic (a = 5.6533 Å)

Piktogramme

Health hazard
GHS08

Signalwort

Danger

Gefahreneinstufungen

Carc. 1B - Repr. 1B - STOT RE 1

Zielorgane

Respiratory system,hematopoietic system

Lagerklassenschlüssel

6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials

WGK

WGK 3

Flammpunkt (°F)

Not applicable

Flammpunkt (°C)

Not applicable

Hier finden Sie alle aktuellen Versionen:

Analysenzertifikate (COA)

Lot/Batch Number
MKCQ3703
MKCP1414
MKCH7479
MKCC3292
10719AD

Die passende Version wird nicht angezeigt?

Wenn Sie eine bestimmte Version benötigen, können Sie anhand der Lot- oder Chargennummer nach einem spezifischen Zertifikat suchen.

Suche nach COA

Besitzen Sie dieses Produkt bereits?

In der Dokumentenbibliothek finden Sie die Dokumentation zu den Produkten, die Sie kürzlich erworben haben.

Die Dokumentenbibliothek aufrufen

Chao-Wei Hsu et al.
Nanotechnology, 23(49), 495306-495306 (2012-11-17)
GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number
Shih-Wei Tan et al.
PloS one, 7(11), e50681-e50681 (2012-12-12)
Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b))
Yu Bomze et al.
Physical review letters, 109(2), 026801-026801 (2012-10-04)
We report on measurements of first-passage-time distributions associated with current switching in weakly coupled GaAs/AlAs superlattices driven by shot noise, a system that is both far from equilibrium and high dimensional. Static current-voltage (I-V) characteristics exhibit multiple current branches and
Chan Il Yeo et al.
Optics express, 20(17), 19554-19562 (2012-10-06)
We present a simple, cost-effective, large scale fabrication technique for antireflective disordered subwavelength structures (d-SWSs) on GaAs substrate by Ag etch masks formed using spin-coated Ag ink and subsequent inductively coupled plasma (ICP) etching process. The antireflection characteristics of GaAs
[A matrix gallium-arsenide detector for roentgenoraphy].
A P Vorob'ev et al.
Meditsinskaia tekhnika, (5)(5), 21-26 (2012-11-20)
Alle zugehörigen Dokumente anzeigen

Artikel

FePt Nanogranular films for high density heat-assisted magnetic recording

A hard disk drive (HDD) is a data storage device that stores digital information by magnetizing nanosized magnets on flat disks and retrieves data by sensing the resulting magnetic field.

Building and Engineering Micro/Nano Architectures of Single-Walled Carbon Nanotubes for Electronic Applications

Building and Engineering Micro/Nano Architectures of Single-Walled Carbon Nanotubes for Electronic Applications

Recent Progress in Spintronic Materials

Spin-based electronic (spintronic) devices offer significant improvement to the limits of conventional charge-based memory and logic devices which suffer from high power usage, leakage current, performance saturation, and device complexity.

Protokolle

Negative Photoresist Procedure

Negative Photoresist Procedure

Unser Team von Wissenschaftlern verfügt über Erfahrung in allen Forschungsbereichen einschließlich Life Science, Materialwissenschaften, chemischer Synthese, Chromatographie, Analytik und vielen mehr..

Setzen Sie sich mit dem technischen Dienst in Verbindung.