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Sigma-Aldrich

Silizium

wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm

Synonym(e):

Silicon element

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About This Item

Lineare Formel:
Si
CAS-Nummer:
7440-21-3
Molekulargewicht:
28.09
EG-Nummer:
231-130-8
MDL-Nummer:
MFCD00085311
UNSPSC-Code:
12352300
PubChem Substanz-ID:
24883547
NACRES:
NA.23

Form

crystalline (cubic (a = 5.4037))
wafer (single side polished)

Enthält

boron as dopant

Durchm. × Dicke

3 in. × 0.5 mm

bp

2355 °C (lit.)

mp (Schmelzpunkt)

1410 °C (lit.)

Dichte

2.33 g/mL at 25 °C (lit.)

Halbleitereigenschaften

<100>, P-type

SMILES String

[Si]

InChI

1S/Si

InChIKey

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Physikalische Eigenschaften

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ω•cm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Lagerklassenschlüssel

13 - Non Combustible Solids

WGK

WGK 3

Flammpunkt (°F)

Not applicable

Flammpunkt (°C)

Not applicable

Persönliche Schutzausrüstung

Eyeshields, Gloves, type N95 (US)

Analysenzertifikate (COA)

Suchen Sie nach Analysenzertifikate (COA), indem Sie die Lot-/Chargennummer des Produkts eingeben. Lot- und Chargennummern sind auf dem Produktetikett hinter den Wörtern ‘Lot’ oder ‘Batch’ (Lot oder Charge) zu finden.

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Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Mariya Nazish Memon et al.
JPMA. The Journal of the Pakistan Medical Association, 62(12), 1329-1332 (2013-07-23)
To evaluate the outcome of nasolacrimal intubation as a primary treatment of congenital nasolacrimal duct obstruction (NLDO) in children up to 4 years of age. During the 3 years period from July 2008 to June 2011, in the Paediatric Ophthalmology
Min Joon Huang et al.
Journal of nanoscience and nanotechnology, 13(6), 3810-3817 (2013-07-19)
In this work, we demonstrated a silicon nanowire (SiNW) biosensing platform capable of simultaneously identifying different Dengue serotypes on a single sensing chip. Four peptide nucleic acids (PNAs), specific to each Dengue serotypes (DENV-1 to DENV-4), were spotted on different
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Protokolle

Negative Photoresist Procedure

Negative Photoresist Procedure

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