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Sigma-Aldrich

Silizium

pieces, 99.95% trace metals basis

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About This Item

Lineare Formel:
Si
CAS-Nummer:
7440-21-3
Molekulargewicht:
28.09
EG-Nummer:
231-130-8
MDL-Nummer:
MFCD00085311
UNSPSC-Code:
12141911
PubChem Substanz-ID:
24861139
NACRES:
NA.23

Assay

99.95% trace metals basis

Form

pieces

bp

2355 °C (lit.)

mp (Schmelzpunkt)

1410 °C (lit.)

Dichte

2.33 g/mL at 25 °C (lit.)

SMILES String

[Si]

InChI

1S/Si

InChIKey

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Verwandte Kategorien

Lagerklassenschlüssel

13 - Non Combustible Solids

WGK

WGK 3

Flammpunkt (°F)

Not applicable

Flammpunkt (°C)

Not applicable

Persönliche Schutzausrüstung

Eyeshields, Gloves, type N95 (US)

Hier finden Sie alle aktuellen Versionen:

Analysenzertifikate (COA)

Lot/Batch Number
MKCM2063
MKCL0838
MKCJ1941
MKCF7364
MKBX4312V

Die passende Version wird nicht angezeigt?

Wenn Sie eine bestimmte Version benötigen, können Sie anhand der Lot- oder Chargennummer nach einem spezifischen Zertifikat suchen.

Suche nach COA

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Silizium powder, max. particle size 45 micron, weight 200 g, purity 99.5%

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Silizium lump, 25 mm max. lump size, weight 50 g, purity 99.999%

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Silizium powder, 45 max. part. size (micron), weight 100 g, high purity 99.998%

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Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
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