MilliporeSigma
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334901

Sigma-Aldrich

Tetramethylammonium hydroxide solution

25 wt. % in methanol

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Linear Formula:
(CH3)4N(OH)
CAS Number:
75-59-2
Molecular Weight:
91.15
Beilstein:
3558708
MDL number:
MFCD00008280
PubChem Substance ID:
57648847

Quality Level

200

vapor pressure

17.5 mmHg ( 20 °C)

form

liquid

concentration

25 wt. % in methanol

impurities

≤10% water
≤2% chloride

density

0.866 g/mL at 25 °C

SMILES string

[OH-].C[N+](C)(C)C

InChI

1S/C4H12N.H2O/c1-5(2,3)4;/h1-4H3;1H2/q+1;/p-1

InChI key

WGTYBPLFGIVFAS-UHFFFAOYSA-M

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General description

Tetramethylammonium hydroxide is a quaternary ammonium salt generally used as an anisotropic etchant for silicon due to its high silicon etching rate.

Application

Tetramethylammonium hydroxide solution (25 wt.% solution in methanol) may be used in the synthesis of zirconium oxides via a modified sol-gel method with potential application as catalyst materials in CO hydrogenation.

Packaging

100, 4×100, 500 mL in glass bottle

Signal Word

Danger

Hazard Classifications

Acute Tox. 2 Dermal - Acute Tox. 2 Oral - Acute Tox. 3 Inhalation - Aquatic Chronic 3 - Eye Dam. 1 - Flam. Liq. 3 - Skin Corr. 1B - STOT RE 1 Dermal - STOT SE 1

Storage Class Code

3 - Flammable liquids

WGK

WGK 2

Flash Point(F)

80.6 °F - closed cup

Flash Point(C)

27 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificate of Analysis

Enter Lot Number to search for Certificate of Analysis (COA).

Certificate of Origin

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Product Information Sheet

Product Information Sheet - 334901

More Documents

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Characterization of Zirconia-based catalysts prepared by precipitation, calcination, and modified sol-gel methods.
Feng Z, et al.
Industrial & Engineering Chemistry Research, 34(1), 78-82 (1995)
Study on anisotropic silicon etching characteristics in various surfactant-added tetramethyl ammonium hydroxide water solutions.
Yang CR, et al.
Journal of Micromechanics and Microengineering, 15(11), 2028-2028 (2005)
The characteristic behavior of TMAH water solution for anisotropic etching on both silicon substrate and SiO 2 layer.
Chen PH, et al.
Sensors and actuators A, Physical, 93(2), 132-137 (2001)
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