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901624

Sigma-Aldrich

Buffered oxide etchant (BOE) 6:1

Synonym(s):

BHF, Buffered HF

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About This Item

UNSPSC Code:
12161700
NACRES:
NA.23

form

liquid

Quality Level

100

General description

BOE 6:1 is 6 parts by volume 40% ammonium fluoride and 1 part by volume 49% HF.
Buffered oxide etchant (BOE) is a wet etchant used in microfabrication. Its primary use is in etching thin films of silicon dioxide (SiO2) or silicon nitride (Si3N4). It is a mixture of a buffering agent, such as ammonium fluoride (NH4F), and hydrofluoric acid (HF). Concentrated HF etches silicon dioxide too quickly for good process control and also peels photoresist used in lithographic patterning.

Application

Buffered oxide etchant (BOE) 6:1 can be used in the oxide removal of AlGaN/GaN-based high electron mobility transistors for gate photolithography. It can be used in a buffer oxide etchant method for the fabrication of micro biochip.

pictograms

Skull and crossbonesCorrosion
GHS06,GHS05

signalword

Danger

Hazard Classifications

Acute Tox. 1 Dermal - Acute Tox. 2 Oral - Acute Tox. 3 Inhalation - Eye Dam. 1 - Skin Corr. 1A

Storage Class

6.1B - Non-combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials

wgk_germany

WGK 2

flash_point_f

Not applicable

flash_point_c

Not applicable

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Certificates of Analysis (COA)

Lot/Batch Number
MKCQ4650
MKCP4504
MKCP0920
MKCM3152
MKCK4278

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Effect of passivation on AlGaN/GaN HEMT device performance
2000 IEEE international symposium on compound semiconductors, 357-363 (2000)
Fabrication of a new micro bio chip and flow cell cytometry system using Bio-MEMS technology
Byun I, et al.
Microelectronics Journal, 39(5), 717-722 (2008)
Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy
Gonzalez-Posada F, et al.
Applied Surface Science, 253(14), 6185-6190 (2007)

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