Aluminum oxide

single crystal substrate, <0001>

Alumina, Sapphire
Linear Formula:
CAS Number:
Molecular Weight:
EC Number:
MDL number:
PubChem Substance ID:

Quality Level


Crystallographic D spacing ((0001) - c plane: 2.165 Angstrom)
Crystallographic D spacing ((1011) - s plane: 1.961 Angstrom)
Crystallographic D spacing ((1040) - m plane: 1.375 Angstrom)
Crystallographic D spacing ((1102) - r plane: 1.740 Angstrom)
Crystallographic D spacing ((1120) - a plane: 2.379 Angstrom)
Crystallographic D spacing ((1123) - n plane: 1.147 Angstrom)
single side polished


single crystal substrate


9 mohs

L × W × thickness

10 mm × 10 mm × 0.5 mm


2040 °C (lit.)

semiconductor properties


SMILES string




InChI key


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1, 5 ea in rigid mailer

Features and Benefits

Common substrate for III-V nitrides as well as many other epitaxial films.

Physical properties

thermal expansion = 7.5 × 10-6 /°C; specific heat = 0.10 cal/°C; thermal conductivity = 46.06 @ 0 °C, 25.12 @ 100 °C, 12.56 @ 400 °C (W/m,K); dielectric constant = ~9.4 @ 300 K at A axis, ~11.58 @ C axis; loss tangent at 10 GHz < 2 × 10-5 at A axis, 5 × 10-6 at C axis

Physical form

Crystalline, hexagonal (a = 4.758 Å, c = 12.992)


13 - Non Combustible Solids

WGK Germany


Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US),Eyeshields,Gloves

Certificate of Analysis

Certificate of Origin

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