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339113

Sigma-Aldrich

Tantalum(V) ethoxide

99.98% trace metals basis

Synonym(s):
Pentaethyl tantalate, Tantalum(V) ethoxide, Pentaethoxytantalum, Tantalum pentaethoxide, Tantalum ethylate
Linear Formula:
Ta(OC2H5)5
CAS Number:
Molecular Weight:
406.25
Beilstein:
3678999
MDL number:
PubChem Substance ID:
NACRES:
NA.23

Quality Level

assay

99.98% trace metals basis

form

liquid

reaction suitability

core: tantalum
reagent type: catalyst

impurities

<2 wt. % toluene

refractive index

n20/D 1.487 (lit.)

bp

155 °C/0.01 mmHg (lit.)

mp

21 °C (lit.)

density

1.566 g/mL at 25 °C (lit.)

SMILES string

CCO[Ta](OCC)(OCC)(OCC)OCC

InChI

1S/5C2H5O.Ta/c5*1-2-3;/h5*2H2,1H3;/q5*-1;+5

InChI key

HSXKFDGTKKAEHL-UHFFFAOYSA-N

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General description

Tantalum(V) ethoxide Ta(OC2H5)5 is a tantalum alkoxide that can be used as a precursor in the preparation of tantalum oxide by chemical vapor deposition (CVD). It has excellent volatility and thermal stability. It can be synthesized by anodic oxidation of tantalum plate in anhydrous ethanol.

Application

Ta(OC2H5)5 can be used in the formation of ultrathin tantalum oxide based capacitors. It can also be used as a liquid precursor in the preparation of tantalum carbide nanopowder for hard coating on metal surfaces.

Packaging

10, 100 g in poly bottle

Pictograms

Flame

Signal Word

Warning

Hazard Statements

Hazard Classifications

Flam. Liq. 3

Storage Class Code

3 - Flammable liquids

WGK

WGK 1

Flash Point(F)

84.2 °F - closed cup

Flash Point(C)

29 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificate of Analysis

Certificate of Origin

The Electrosynthesis of Tantalum Ethoxide
Yang H, et al.
Electrochemistry, 82(9), 743-748 (2014)
Controlling the synthesis of TaC nanopowders by injecting liquid precursor into RF induction plasma
Ishigaki T, et al.
Science and Technology of Advanced Materials, 6(2), 111-111 (2005)
Ultrathin tantalum oxide capacitor dielectric layers fabricated using rapid thermal nitridation prior to low pressure chemical vapor deposition
Kamiyama S, et al.
Journal of the Electrochemical Society, 140(6), 1617-1625 (1993)
Leakage currents in amorphous Ta 2 O 5 thin films
Chiu F, et al.
Journal of Applied Physics, 81(10), 6911-6915 (1997)
Miran Kenk et al.
Schizophrenia bulletin, 41(1), 85-93 (2014-11-12)
Neuroinflammation and abnormal immune responses have been implicated in schizophrenia (SCZ). Past studies using positron emission tomography (PET) that examined neuroinflammation in patients with SCZ in vivo using the translocator protein 18kDa (TSPO) target were limited by the insensitivity of

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