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647535

Sigma-Aldrich

硅

wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm

别名:

Silicon element

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About This Item

线性分子式:
Si
CAS号:
7440-21-3
分子量:
28.09
EC號碼:
231-130-8
MDL號碼:
MFCD00085311
分類程式碼代碼:
12352300
PubChem物質ID:
24883543
NACRES:
NA.23

形狀

crystalline (cubic (a = 5.4037))
wafer (single side polished)

品質等級

100

不包含

dopant

直徑× 厚度

3 in. × 0.5 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

密度

2.33 g/mL at 25 °C (lit.)

半導體屬性

<100>, N-type

SMILES 字串

[Si]

InChI

1S/Si

InChI 密鑰

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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相关类别

應用

Silicon wafers are majorly used in electronics as substrate materials. They are also used in a variety of applications like solar cells, microelectronics, and other integrated circuits.

物理性質

氧含量：≤ 1~1.8×1018/cm3；碳含量：≤ 5×1016/cm3；晶棒直径：1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 1,000 - 2,300Ωcm

儲存類別代碼

13 - Non Combustible Solids

水污染物質分類（WGK）

WGK 3

閃點（°F）

Not applicable

閃點（°C）

Not applicable

個人防護裝備

Eyeshields, Gloves, type N95 (US)

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分析证书(COA)

Lot/Batch Number
MKCR0472
MKCQ0514
MKCN5974
MKCH2379
MKCG5810

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二氧化硅 single crystal substrate, optical grade, 99.99% trace metals basis, L × W × thickness 10&#160;mm × 10&#160;mm × 0.5&#160;mm

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634867

二氧化硅

镍 sputtering target, diam. × thickness 2.00&#160;in. × 0.25&#160;in., 99.95% trace metals basis

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镍

氧化钼(VI) nanopowder, 100&#160;nm (TEM), 99.5% trace metals basis

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镀金显微镜载片

24.7% record efficiency HIT solar cell on thin silicon wafer
Taguchi M, et al.
IEEE journal of Photovoltaics, 4(1), 96-99 (2013)
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Mariya Nazish Memon et al.
JPMA. The Journal of the Pakistan Medical Association, 62(12), 1329-1332 (2013-07-23)
To evaluate the outcome of nasolacrimal intubation as a primary treatment of congenital nasolacrimal duct obstruction (NLDO) in children up to 4 years of age. During the 3 years period from July 2008 to June 2011, in the Paediatric Ophthalmology
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