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Merck

920932

Sigma-Aldrich

Monolayer hexagonal Boron Nitride (hBN) on Si/SiO2 wafer

diam. 100 mm (4 in.)

别名:

Boronitrene, Hexagonal boron nitride monolayer, Single-layer hexagonal boron nitride, White graphene

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About This Item

经验公式(希尔记法):
BN
CAS号:
分子量:
24.82
MDL號碼:
分類程式碼代碼:
12352302
NACRES:
NA.23

描述

Monolayer h-BN
hBN Coverage: 100% with sporadic adlayers
Bandgap: 5.97 eV
Raman Peak: 1370 /cm-1

Orientation: <1-0-0>
Metal Impurities: 1.00e10 – 5.00e10 (at/cm2)

Substrate
Type/Doping: P/B
Wafer Thickness : 500 ± 50 μm
Oxide Thickness: 300 nm
Resistivity: 1 – 10 (ohm/cm)

品質等級

直徑

100 mm (4 in.)

粒徑

>4 μm

InChI

1S/BN/c1-2

InChI 密鑰

PZNSFCLAULLKQX-UHFFFAOYSA-N

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應用

Monolayer hexagonal boron nitride (h-BN), also known as ″white graphene″, is a wide-bandgap 2D crystal (∼6 eV that can be tuned to ∼2 eV) with exceptional strength, large oxidation resistance at high temperatures, and optical functionalities. Among its potential applications are:
  • Two-dimensional electronics
  • Nanophotonic and other optoelectronic devices
  • Quantum communication and information science
  • Aerospace industry
  • MEMS and NEMS
  • Micro-/nano- actuators
  • Insulating/transparent coatings.

儲存和穩定性

To ensure the maximum shelf life of your hBN sample, it is best stored under vacuum or in inert atmosphere (Argon or Nitrogen) conditions once the vacuum sealed package has been opened.

儲存類別代碼

13 - Non Combustible Solids

水污染物質分類(WGK)

WGK 3


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Monolayer to Bulk Properties of Hexagonal Boron Nitride.
Wickramaratne D, et al.
The Journal of Physical Chemistry C, 122(44), 25524-25529 (2018)
Xu-Qian Zheng et al.
Microsystems & nanoengineering, 3, 17038-17038 (2017-07-31)
Atomic layers of hexagonal boron nitride (h-BN) crystal are excellent candidates for structural materials as enabling ultrathin, two-dimensional (2D) nanoelectromechanical systems (NEMS) due to the outstanding mechanical properties and very wide bandgap (5.9 eV) of h-BN. In this work, we report
Kun Ba et al.
Scientific reports, 7, 45584-45584 (2017-04-04)
Monolayer hexagonal boron nitride (h-BN) possesses a wide bandgap of ~6 eV. Trimming down the bandgap is technically attractive, yet poses remarkable challenges in chemistry. One strategy is to topological reform the h-BN's hexagonal structure, which involves defects or grain boundaries

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