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形狀
crystalline (cubic (a = 5.4037))
wafer (single side polished)
品質等級
不包含
dopant
直徑× 厚度
2 in. × 0.5 mm
bp
2355 °C (lit.)
mp
1410 °C (lit.)
密度
2.33 g/mL at 25 °C (lit.)
半導體屬性
<100>, N-type
SMILES 字串
[Si]
InChI
1S/Si
InChI 密鑰
XUIMIQQOPSSXEZ-UHFFFAOYSA-N
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一般說明
應用
- Innovative Solutions for High-Performance Silicon Anodes in Lithium-Ion Batteries: Overcoming Challenges and Real-World Applications.:该文解决了在锂离子电池中采用高性能硅负极的挑战和实际应用,提供增强效率的创新解决方案(Khan et al., 2024)。
- Strain Engineering: Perfecting Freestanding Perovskite Oxide Fabrication.:研究改进了自支撑钙钛矿氧化物制造的应变工程,对于各种高纯硅的学术应用有重要意义(Yun et al., 2024)。
物理性質
儲存類別代碼
13 - Non Combustible Solids
水污染物質分類(WGK)
WGK 3
閃點(°F)
Not applicable
閃點(°C)
Not applicable
個人防護裝備
Eyeshields, Gloves, type N95 (US)
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商品
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实验方案
Negative Photoresist Procedure
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