跳转至内容
Merck

264067

Sigma-Aldrich

wire, diam. 0.45-0.55 mm, 99.995% trace metals basis

别名:

Indium element

登录查看公司和协议定价


About This Item

经验公式(希尔记法):
In
CAS号:
分子量:
114.82
EC號碼:
MDL號碼:
分類程式碼代碼:
12141719
PubChem物質ID:
NACRES:
NA.23

蒸汽壓力

<0.01 mmHg ( 25 °C)

化驗

99.995% trace metals basis

形狀

wire

電阻係數

8.37 μΩ-cm

直徑

0.45-0.55 mm

mp

156.6 °C (lit.)

密度

7.3 g/mL at 25 °C (lit.)

SMILES 字串

[In]

InChI

1S/In

InChI 密鑰

APFVFJFRJDLVQX-UHFFFAOYSA-N

正在寻找类似产品? 访问 产品对比指南

數量

2.8g = 2m;14g = 10m

象形圖

Health hazard

訊號詞

Danger

危險聲明

危險分類

STOT RE 1 Inhalation

標靶器官

Lungs

儲存類別代碼

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

水污染物質分類(WGK)

WGK 1

閃點(°F)

Not applicable

閃點(°C)

Not applicable

個人防護裝備

dust mask type N95 (US), Eyeshields, Gloves


历史批次信息供参考:

分析证书(COA)

Lot/Batch Number

没有发现合适的版本?

如果您需要特殊版本,可通过批号或批次号查找具体证书。

已有该产品?

在文件库中查找您最近购买产品的文档。

访问文档库

Ching-Hwa Ho et al.
ACS applied materials & interfaces, 5(6), 2269-2277 (2013-03-05)
The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-In2Se3 hexagonal microplates has been explored. Hexagonal α-In2Se3 microplates with the sizes of 10s to 100s of micrometers were synthesized and prepared by the chemical vapor transport method
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer
Han-Youl Ryu et al.
Optics express, 21 Suppl 1, A190-A200 (2013-02-15)
We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical simulations. The electrical efficiency (EE) and the internal quantum efficiency (IQE) are
Ray-Hua Horng et al.
Optics express, 21 Suppl 1, A1-A6 (2013-02-15)
A wing-type imbedded electrodes was introduced into the lateral light emitting diode configuration (WTIE-LEDs) to reduce the effect of light shading of electrode in conventional sapphire-based LEDs (CSB-LEDs). The WTIE-LEDs with double-side roughened surface structures not only can eliminate the

我们的科学家团队拥有各种研究领域经验,包括生命科学、材料科学、化学合成、色谱、分析及许多其他领域.

联系技术服务部门