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蒸汽壓力
<0.01 mmHg ( 25 °C)
化驗
99.99% trace metals basis
形狀
foil
電阻係數
8.37 μΩ-cm
厚度
0.127 mm
mp
156.6 °C (lit.)
密度
7.3 g/mL at 25 °C (lit.)
SMILES 字串
[In]
InChI
1S/In
InChI 密鑰
APFVFJFRJDLVQX-UHFFFAOYSA-N
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一般說明
Indium (In) is a silvery-white post-transition metal known for its low melting point and unique properties. It has a density of approximately 7.31 g/cm3 and is characterized by its malleability and ductility, making it easy to work with in various applications. Indium is widely used in electronics, particularly in the production of indium tin oxide (ITO) for touchscreens and flat-panel displays. It also plays a role in soldering materials, coatings, and as an alloying agent to improve the properties of other metals. Our high-purity indium foil, with a thickness of 0.127 mm and a purity of 99.99% trace metals basis, is particularly valuable for applications requiring minimal impurities.
應用
铟箔是用于低温的具有高电导率的热界面材料。它也可以用作铟蒸气源，用于在硅衬底上制备氮化铟纳米线。它也可用于飞行时间二次离子质谱（ToF-SIMS） 分析粉末样品。
數量
2.3 g = 50 × 50 mm；9.2 g = 100 × 100 mm
訊號詞
Danger
危險聲明
危險分類
STOT RE 1 Inhalation
標靶器官
Lungs
儲存類別代碼
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
水污染物質分類（WGK）
WGK 1
閃點（°F）
Not applicable
閃點（°C）
Not applicable
個人防護裝備
dust mask type N95 (US), Eyeshields, Gloves
Cryogen-free operation of 10 V programmable Josephson voltage standards
Howe L, et al.
IEEE Transactions on Applied Superconductivity, 23(3) (2012)
Selective-area growth of indium nitride nanowires on gold-patterned Si (100) substrates
Liang CH, et al.
Applied Physics Letters, 81(1), 22-24 (2002)
Characteristic fragment ions from lignin and polysaccharides in ToF-SIMS
Tokareva EN, et al.
Wood Science and Technology, 45(4), 767-785 (2011)
Ching-Hwa Ho et al.
ACS applied materials & interfaces, 5(6), 2269-2277 (2013-03-05)
The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-In2Se3 hexagonal microplates has been explored. Hexagonal α-In2Se3 microplates with the sizes of 10s to 100s of micrometers were synthesized and prepared by the chemical vapor transport method
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
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