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264113

Sigma-Aldrich

铟

beads, diam. 2-5 mm, 99.999% trace metals basis

别名:

Indium element

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About This Item

经验公式（希尔记法）:
In
CAS号:
7440-74-6
分子量:
114.82
EC號碼:
231-180-0
MDL號碼:
MFCD00134048
分類程式碼代碼:
12141719
PubChem物質ID:
24855907
NACRES:
NA.23

蒸汽壓力

<0.01 mmHg ( 25 °C)

化驗

99.999% trace metals basis

形狀

beads

電阻係數

8.37 μΩ-cm

直徑

2-5 mm

mp

156.6 °C (lit.)

密度

7.3 g/mL at 25 °C (lit.)

SMILES 字串

[In]

InChI

1S/In

InChI 密鑰

APFVFJFRJDLVQX-UHFFFAOYSA-N

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相关类别

一般說明

Indium, a rare and stable element, exhibits exceptional properties such as high thermal and electrical conductivity. These characteristics make indium a vital component in various applications, particularly in the electronics industry, where it is used in indium tin oxide (ITO) for transparent conductive coatings in touch screens, and displays. Additionally, it is also utilized in the production of solar cells, LEDs, and other optoelectronic devices.

應用


  • Exploring Layered Disorder in Lithium-Ion-Conducting Li(3)Y(1-x)In(x)Cl(6).: Investigates the effect of indium substitution in lithium yttrium chloride solid electrolytes, enhancing ionic conductivity and stability for battery applications ( Banik et al., 2024).

  • Ultrasoft and Ultrastretchable Wearable Strain Sensors with Anisotropic Conductivity Enabled by Liquid Metal Fillers.: Develops a flexible, stretchable strain sensor using indium-based liquid metal fillers, targeting applications in wearable electronics ( Choe et al., 2022).

  • A smelting-rolling strategy for ZnIn bulk phase alloy anodes.: Describes a novel processing technique for zinc-indium alloy anodes that enhances electrochemical performance and durability in batteries ( Chai et al., 2022).

  • In-MOF-Derived Hierarchically Hollow Carbon Nanostraws for Advanced Zinc-Iodine Batteries.: Presents a method to fabricate hierarchically hollow carbon nanostructures from indium-based metal-organic frameworks, improving the energy storage capacity of zinc-iodine batteries ( Chai et al., 2022).

象形圖

Health hazard
GHS08

訊號詞

Danger

危險聲明

H372

危險分類

STOT RE 1 Inhalation

標靶器官

Lungs

儲存類別代碼

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

水污染物質分類（WGK）

WGK 1

閃點（°F）

Not applicable

閃點（°C）

Not applicable

個人防護裝備

dust mask type N95 (US), Eyeshields, Gloves

历史批次信息供参考:

分析证书(COA)

Lot/Batch Number
MKCF3360
MKCD6793
MKCD3842
MKBZ6977V
MKBW4318V

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铟 powder, &#8722;100&#160;mesh, 99.99% trace metals basis

Sigma-Aldrich

264032

铟

铟 wire, diam. 1.0&#160;mm, 99.995% trace metals basis

Sigma-Aldrich

357073

铟

镓 99.9995% trace metals basis

Sigma-Aldrich

203319

镓

vibrant-m

NIST3124A

Indium (In) standard solution

Ching-Hwa Ho et al.
ACS applied materials & interfaces, 5(6), 2269-2277 (2013-03-05)
The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-In2Se3 hexagonal microplates has been explored. Hexagonal α-In2Se3 microplates with the sizes of 10s to 100s of micrometers were synthesized and prepared by the chemical vapor transport method
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer
Han-Youl Ryu et al.
Optics express, 21 Suppl 1, A190-A200 (2013-02-15)
We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical simulations. The electrical efficiency (EE) and the internal quantum efficiency (IQE) are
Ray-Hua Horng et al.
Optics express, 21 Suppl 1, A1-A6 (2013-02-15)
A wing-type imbedded electrodes was introduced into the lateral light emitting diode configuration (WTIE-LEDs) to reduce the effect of light shading of electrode in conventional sapphire-based LEDs (CSB-LEDs). The WTIE-LEDs with double-side roughened surface structures not only can eliminate the
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