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651486

Sigma-Aldrich

Gallium arsenide

(single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm

Sinonimo/i:

Gallium monoarsenide

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About This Item

Formula condensata:
GaAs
Numero CAS:
1303-00-0
Peso molecolare:
144.64
Numero CE:
215-114-8
Numero MDL:
MFCD00011017
Codice UNSPSC:
12352300
ID PubChem:
24883832
NACRES:
NA.23

Livello qualitativo

100

Stato

(single crystal substrate)

Resistività

≥1E7 Ω-cm

diam. × spessore

2 in. × 0.5 mm

Densità

5.31 g/mL at 25 °C (lit.)

Caratteristiche del semiconduttore

<100>

Stringa SMILE

[Ga]#[As]

InChI

1S/As.Ga
JBRZTFJDHDCESZ-UHFFFAOYSA-N

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Categorie correlate

Proprietà fisiche

Mobility >=4500 cm2 · V-1 · S-1
Undoped (Si-type semiconductor), EPD < 5 × 104 cm-2, growth technique = LEC & HB

Stato fisico

cubic (a = 5.6533 Å)

Pittogrammi

Health hazard
GHS08

Avvertenze

Danger

Indicazioni di pericolo

H350,H360F,H372

Classi di pericolo

Carc. 1B - Repr. 1B - STOT RE 1

Organi bersaglio

Respiratory system,hematopoietic system

Codice della classe di stoccaggio

6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials

Classe di pericolosità dell'acqua (WGK)

WGK 3

Punto d’infiammabilità (°F)

Not applicable

Punto d’infiammabilità (°C)

Not applicable

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Certificati d'analisi (COA)

Lot/Batch Number
MKCQ3703
MKCP1414
MKCH7479
MKCC3292
10719AD

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Chao-Wei Hsu et al.
Nanotechnology, 23(49), 495306-495306 (2012-11-17)
GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number
Shih-Wei Tan et al.
PloS one, 7(11), e50681-e50681 (2012-12-12)
Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b))
Yu Bomze et al.
Physical review letters, 109(2), 026801-026801 (2012-10-04)
We report on measurements of first-passage-time distributions associated with current switching in weakly coupled GaAs/AlAs superlattices driven by shot noise, a system that is both far from equilibrium and high dimensional. Static current-voltage (I-V) characteristics exhibit multiple current branches and
Chan Il Yeo et al.
Optics express, 20(17), 19554-19562 (2012-10-06)
We present a simple, cost-effective, large scale fabrication technique for antireflective disordered subwavelength structures (d-SWSs) on GaAs substrate by Ag etch masks formed using spin-coated Ag ink and subsequent inductively coupled plasma (ICP) etching process. The antireflection characteristics of GaAs
[A matrix gallium-arsenide detector for roentgenoraphy].
A P Vorob'ev et al.
Meditsinskaia tekhnika, (5)(5), 21-26 (2012-11-20)
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