456365
3-Dodecylthiophene
97%
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About This Item
Prodotti consigliati
Livello qualitativo
Saggio
97%
Indice di rifrazione
n20/D 1.488 (lit.)
P. eboll.
290 °C (lit.)
Densità
0.902 g/mL at 25 °C (lit.)
Temperatura di conservazione
2-8°C
Stringa SMILE
CCCCCCCCCCCCc1ccsc1
InChI
1S/C16H28S/c1-2-3-4-5-6-7-8-9-10-11-12-16-13-14-17-15-16/h13-15H,2-12H2,1H3
RFKWIEFTBMACPZ-UHFFFAOYSA-N
Categorie correlate
Descrizione generale
3-Dodecylthiophene (3-DT) is a conjugating monomer that can be used as an active layer on semiconductors. It has good electronic properties and can be used in the development of p-type semiconducting polymers. It is mainly used in the formation of poly(3-dodecylthiophene) (P3DT) through electrochemical polymerization. P3DT can further be utilized for a variety of organic electronic based applications.
Applicazioni
Conducting polymer precursor.
Codice della classe di stoccaggio
10 - Combustible liquids
Classe di pericolosità dell'acqua (WGK)
WGK 3
Punto d’infiammabilità (°F)
Not applicable
Punto d’infiammabilità (°C)
Not applicable
Dispositivi di protezione individuale
Eyeshields, Gloves
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Subthreshold characteristics of field effect transistors based on poly (3-dodecylthiophene) and an organic insulator
Journal of Applied Physics, 92(1), 330-337 (2002)
Controlled charge transport by polymer blend dielectrics in top-gate organic field-effect transistors for low-voltage-operating complementary circuits
ACS Applied Materials & Interfaces, 4(11), 6176-6184 (2012)
Nuclear magnetic resonance studies on electrochemically prepared poly (3-dodecylthiophene)
Macromolecules, 24(5), 1196-1200 (1991)
Nanoscale, 13(3), 1784-1790 (2021-01-13)
Plasmon-induced chemical reactions triggered by near-infrared light illumination might enable efficient photo energy conversion. Here, electrochemical oxidative polymerization of a conductive polymer was conducted on plasmonic photoconversion electrodes. The absolute electrochemical potential of the generated holes was estimated from the
Journal of the American Chemical Society, 117, 233-233 (1995)
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