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203424

Sigma-Aldrich

Indium(III) oxide

99.998% trace metals basis

Sinonimo/i:

Diindium trioxide, Indium sesquioxide

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About This Item

Formula empirica (notazione di Hill):
In2O3
Numero CAS:
Peso molecolare:
277.63
Numero CE:
Numero MDL:
Codice UNSPSC:
12352303
ID PubChem:
NACRES:
NA.23

Tensione di vapore

<0.01 mmHg ( 25 °C)

Livello qualitativo

Saggio

99.998% trace metals basis

Stato

powder

Impiego in reazioni chimiche

reagent type: catalyst
core: indium

Densità

7.18 g/mL at 25 °C (lit.)

applicazioni

battery manufacturing

Stringa SMILE

O=[In]O[In]=O

InChI

1S/2In.3O
SHTGRZNPWBITMM-UHFFFAOYSA-N

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Applicazioni

  • Synthesis and Characterization: The development of gold nanoclusters on the surface of tin and indium oxide films, synthesizing new materials for advanced applications (Korotcenkov et al., 2014).
  • Photocatalysis: Using nitrogen/sulfur-codoped carbon-coated indium oxide nanoparticles as excellent photocatalysts, providing insights into environmental and energy applications (Sun et al., 2019).

Codice della classe di stoccaggio

11 - Combustible Solids

Classe di pericolosità dell'acqua (WGK)

WGK 3

Punto d’infiammabilità (°F)

Not applicable

Punto d’infiammabilità (°C)

Not applicable

Dispositivi di protezione individuale

dust mask type N95 (US), Eyeshields, Gloves


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Huimeng Wu et al.
Journal of the American Chemical Society, 133(36), 14327-14337 (2011-08-11)
This Article reports a mechanistic study on the formation of colloidal UO(2)/In(2)O(3) and FePt/In(2)O(3) heterodimer nanocrystals. These dimer nanocrystals were synthesized via the growth of In(2)O(3) as the epitaxial material onto the seed nanocrystals of UO(2) or FePt. The resulting
Xiaoyun Li et al.
Environmental science & technology, 46(10), 5528-5534 (2012-04-12)
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Xuming Zou et al.
ACS nano, 7(1), 804-810 (2012-12-12)
In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode
Ariel Amir et al.
Proceedings of the National Academy of Sciences of the United States of America, 109(6), 1850-1855 (2012-02-09)
Slow relaxation occurs in many physical and biological systems. "Creep" is an example from everyday life. When stretching a rubber band, for example, the recovery to its equilibrium length is not, as one might think, exponential: The relaxation is slow
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Nanoscale, 4(10), 3001-3012 (2012-04-13)
With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive

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