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289418

Sigma-Aldrich

Indium(III) oxide

99.99% trace metals basis

Sinonimo/i:

Diindium trioxide, Indium sesquioxide

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About This Item

Formula empirica (notazione di Hill):
In2O3
Numero CAS:
1312-43-2
Peso molecolare:
277.63
Numero CE:
215-193-9
Numero MDL:
MFCD00011060
Codice UNSPSC:
12352300
ID PubChem:
24857196
NACRES:
NA.23

Tensione di vapore

<0.01 mmHg ( 25 °C)

Livello qualitativo

100

Saggio

99.99% trace metals basis

Forma fisica

powder

Impiego in reazioni chimiche

reagent type: catalyst
core: indium

Densità

7.18 g/mL at 25 °C (lit.)

applicazioni

battery manufacturing

Stringa SMILE

O=[In]O[In]=O

InChI

1S/2In.3O
SHTGRZNPWBITMM-UHFFFAOYSA-N

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Categorie correlate

Applicazioni

  • Comparative analysis on application conditions of indium (III) oxide-reinforced glasses in nuclear waste management and source transportation: A Monte Carlo study: This research explores the use of indium (III) oxide-reinforced glass for radioactive waste containment, highlighting its effectiveness and potential in nuclear waste management (ALMisned et al., 2023).
  • Double-shelled hollow rods assembled from nitrogen/sulfur-codoped carbon coated indium oxide nanoparticles as excellent photocatalysts: Discusses the synthesis and application of indium oxide nanoparticles in photocatalysis, demonstrating significant enhancements in environmental cleanup technologies (Sun et al., 2019).
  • Black indium oxide a photothermal CO2 hydrogenation catalyst: Investigates black indium oxide for its use in photocatalytic CO2 reduction, a critical process for sustainable energy and chemical synthesis (Wang et al., 2020).
  • Material proposal for 2D indium oxide: This study proposes two-dimensional indium oxide, discussing its material characteristics and potential applications in electronics and optoelectronics (Kakanakova-Georgieva et al., 2021).
  • Purification of indium by solvent extraction with undiluted ionic liquids: Examines the processes of extracting and purifying indium using green chemistry approaches, contributing to more sustainable practices in materials processing (Deferm et al., 2016).

Codice della classe di stoccaggio

11 - Combustible Solids

Classe di pericolosità dell'acqua (WGK)

WGK 3

Punto d’infiammabilità (°F)

Not applicable

Punto d’infiammabilità (°C)

Not applicable

Dispositivi di protezione individuale

dust mask type N95 (US), Eyeshields, Gloves

Certificati d'analisi (COA)

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Huimeng Wu et al.
Journal of the American Chemical Society, 133(36), 14327-14337 (2011-08-11)
This Article reports a mechanistic study on the formation of colloidal UO(2)/In(2)O(3) and FePt/In(2)O(3) heterodimer nanocrystals. These dimer nanocrystals were synthesized via the growth of In(2)O(3) as the epitaxial material onto the seed nanocrystals of UO(2) or FePt. The resulting
Xiaoyun Li et al.
Environmental science & technology, 46(10), 5528-5534 (2012-04-12)
Perfluorooctanoic acid (C(7)F(15)COOH, PFOA) has increasingly attracted worldwide concerns due to its global occurrence and resistance to most conventional treatment processes. Though TiO(2)-based photocatalysis is strong enough to decompose most organics, it is not effective for PFOA decomposition. We first
Xuming Zou et al.
ACS nano, 7(1), 804-810 (2012-12-12)
In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode
Mareike V Hohmann et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 23(33), 334203-334203 (2011-08-05)
The ionization potentials of In(2)O(3) films grown epitaxially by magnetron sputtering on Y-stabilized ZrO(2) substrates with (100) and (111) surface orientation are determined using photoelectron spectroscopy. Epitaxial growth is verified using x-ray diffraction. The observed ionization potentials, which directly affect
Di Chen et al.
Nanoscale, 4(10), 3001-3012 (2012-04-13)
With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive
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