Pular para o conteúdo
Merck
Todas as fotos(1)

Documentos Principais

774022

Sigma-Aldrich

Yttrium(III) oxide

sputtering target, diam. × thickness 2.00 in. × 0.25 in., 99.99% trace metals basis

Sinônimo(s):

Yttria

Faça loginpara ver os preços organizacionais e de contrato


About This Item

Fórmula linear:
Y2O3
Número CAS:
Peso molecular:
225.81
Número CE:
Número MDL:
Código UNSPSC:
12352302
ID de substância PubChem:
NACRES:
NA.23

Ensaio

99.99% trace metals basis

Formulário

powder

adequação da reação

core: yttrium

diâmetro × espessura

2.00 in. × 0.25 in.

pf

2410 °C (lit.)

densidade

5.01 g/mL at 25 °C (lit.)

cadeia de caracteres SMILES

O=[Y]O[Y]=O

InChI

1S/3O.2Y

chave InChI

SIWVEOZUMHYXCS-UHFFFAOYSA-N

Procurando produtos similares? Visita Guia de comparação de produtos

Aplicação

Solid Oxide Fuel cells operating at temperatures below 800 C (also known as intermediate temperature solid oxide fuel cell, IT-SOFC) are currently the topic of much research and development owing to the high degradation rates and materials costs incurred for SOFC operating at temperatures above 900 C. Thin films of electrode and electrolyte layers is one of the ways to achieve high performances in IT-SOFC.
Yttrium oxide sputtering target can be used for physical vapor deposition of thin films of yttria stabilized zirconia layers for IT-SOFC. Yttrium containing films are used as thermal barrier and protective coatings in thermoelectric devices, rare earth doped yttrium oxide films are studied for phosphor applications.

Código de classe de armazenamento

13 - Non Combustible Solids

Classe de risco de água (WGK)

WGK 1

Ponto de fulgor (°F)

Not applicable

Ponto de fulgor (°C)

Not applicable


Escolha uma das versões mais recentes:

Certificados de análise (COA)

Lot/Batch Number

Não está vendo a versão correta?

Se precisar de uma versão específica, você pode procurar um certificado específico pelo número do lote ou da remessa.

Já possui este produto?

Encontre a documentação dos produtos que você adquiriu recentemente na biblioteca de documentos.

Visite a Biblioteca de Documentos

Carolina Mochales et al.
The journal of physical chemistry. B, 117(6), 1694-1701 (2012-11-08)
The interest in electrophoretic deposition (EPD) for nanomaterials and ceramics production has widely increased due to the versatility of this technique to effectively combine different materials in unique shapes and structures. We successfully established an EPD layering process with submicrometer
Bipin Kumar Gupta et al.
Small (Weinheim an der Bergstrasse, Germany), 8(19), 3028-3034 (2012-07-19)
Highly luminescent-paramagnetic nanophosphors have a seminal role in biotechnology and biomedical research due to their potential applications in biolabeling, bioimaging, and drug delivery. Herein, the synthesis of high-quality, ultrafine, europium-doped yttrium oxide nanophosphors (Y(1.9)O(3):Eu(0.1)(3+)) using a modified sol-gel technique is
Timur Sh Atabaev et al.
Journal of colloid and interface science, 373(1), 14-19 (2011-12-06)
Eu(3+) and Tb(3+) codoped Y(2)O(3) submicron particles were prepared using the simple urea homogeneous precipitation method. X-ray diffraction patterns revealed the synthesized particles to have a pure cubic Y(2)O(3) structure. Field-emission scanning electron microscopy and field-emission transmission electron microscopy showed
Masoud Allahkarami et al.
Dental materials : official publication of the Academy of Dental Materials, 27(12), 1279-1284 (2011-10-14)
Chipping failures observed clinically in bilayer systems of porcelain and zirconia restorations should be coupled with a monoclinic to tetragonal phase transformation in the zirconia layer due to the high compressive stress. Phase transformations were mapped using 2D micro X-ray
Eun-Ok Oh et al.
Advanced materials (Deerfield Beach, Fla.), 24(25), 3373-3377 (2012-06-01)
An extremely thin bilayer electrolyte consisting of yttria-stabilized zirconia (YSZ) and gadolinia-doped ceria (GDC) is successfully fabricated on a sintered NiO-YSZ substrate. Major processing flaws are effectively eliminated by applying local constraints to YSZ nanoparticles, and excellent open circuit voltage

Artigos

Spin-based electronic (spintronic) devices offer significant improvement to the limits of conventional charge-based memory and logic devices which suffer from high power usage, leakage current, performance saturation, and device complexity.

The properties of many devices are limited by the intrinsic properties of the materials that compose them.

Nossa equipe de cientistas tem experiência em todas as áreas de pesquisa, incluindo Life Sciences, ciência de materiais, síntese química, cromatografia, química analítica e muitas outras.

Entre em contato com a assistência técnica