366870
Indium(III) phosphide
pieces, 3-20 mesh, 99.998% trace metals basis
Sinônimo(s):
Indium monophosphide, Indium phosphide
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About This Item
Fórmula linear:
InP
Número CAS:
Peso molecular:
145.79
Número CE:
Número MDL:
Código UNSPSC:
12352300
ID de substância PubChem:
NACRES:
NA.23
Produtos recomendados
Nível de qualidade
Ensaio
99.998% trace metals basis
forma
pieces
adequação da reação
reagent type: catalyst
core: indium
tamanho de partícula
3-20 mesh
cadeia de caracteres SMILES
P#[In]
InChI
1S/In.P
chave InChI
GPXJNWSHGFTCBW-UHFFFAOYSA-N
Palavra indicadora
Danger
Frases de perigo
Declarações de precaução
Classificações de perigo
Carc. 1B - Repr. 2 - STOT RE 1
Código de classe de armazenamento
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
Classe de risco de água (WGK)
WGK 3
Ponto de fulgor (°F)
Not applicable
Ponto de fulgor (°C)
Not applicable
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Alberto L D Moreau et al.
Biosensors & bioelectronics, 36(1), 62-68 (2012-04-28)
The development of highly-sensitive and label-free operating semiconductor-based, biomaterial detecting sensors has important applications in areas such as environmental science, biomedical research and medical diagnostics. In the present study, we developed an Indium Phosphide (InP) semiconductor-based resistive biosensor using the
Ilaria Bargigia et al.
Applied spectroscopy, 66(8), 944-950 (2012-07-18)
We present a new compact system for time-domain diffuse optical spectroscopy of highly scattering media operating in the wavelength range from 1100 nm to 1700 nm. So far, this technique has been exploited mostly up to 1100 nm: we extended
Xuan Zhang et al.
Nanotechnology, 23(27), 275103-275103 (2012-06-20)
Direct comparisons of different types of nanoparticles for drug delivery have seldom been performed. In this study we compare the physical properties and cellular activity of doxorubicin (Dox) conjugates to gold nanoparticles (Au) and InP quantum dots of comparable diameter.
Kouta Tateno et al.
Nano letters, 12(6), 2888-2893 (2012-05-19)
We investigated the Au-assisted growth of alternating InAsP/InP heterostructures in wurtzite InP nanowires on InP(111)B substrates for constructing multiple-quantum-dot structures. Vertical InP nanowires without stacking faults were obtained at a high PH(3)/TMIn mole flow ratio of 300-1000. We found that
Myung-Joon Kwack et al.
Optics express, 20(27), 28734-28741 (2012-12-25)
A strictly non-blocking 8 × 8 switch for high-speed WDM optical interconnection is realized on InP by using the phased-array scheme for the first time. The matrix switch architecture consists of over 200 functional devices such as star couplers, phase-shifters
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