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264113

Sigma-Aldrich

Indium

beads, diam. 2-5 mm, 99.999% trace metals basis

Sinônimo(s):

Indium element

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About This Item

Fórmula empírica (Notação de Hill):
In
Número CAS:
7440-74-6
Peso molecular:
114.82
Número CE:
231-180-0
Número MDL:
MFCD00134048
Código UNSPSC:
12141719
ID de substância PubChem:
24855907
NACRES:
NA.23

pressão de vapor

<0.01 mmHg ( 25 °C)

Nível de qualidade

100

Ensaio

99.999% trace metals basis

forma

beads

resistividade

8.37 μΩ-cm

Diâmetro

2-5 mm

pf

156.6 °C (lit.)

densidade

7.3 g/mL at 25 °C (lit.)

cadeia de caracteres SMILES

[In]

InChI

1S/In

chave InChI

APFVFJFRJDLVQX-UHFFFAOYSA-N

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Descrição geral

Indium, a rare and stable element, exhibits exceptional properties such as high thermal and electrical conductivity. These characteristics make indium a vital component in various applications, particularly in the electronics industry, where it is used in indium tin oxide (ITO) for transparent conductive coatings in touch screens, and displays. Additionally, it is also utilized in the production of solar cells, LEDs, and other optoelectronic devices.

Aplicação


  • Exploring Layered Disorder in Lithium-Ion-Conducting Li(3)Y(1-x)In(x)Cl(6).: Investigates the effect of indium substitution in lithium yttrium chloride solid electrolytes, enhancing ionic conductivity and stability for battery applications ( Banik et al., 2024).

  • Ultrasoft and Ultrastretchable Wearable Strain Sensors with Anisotropic Conductivity Enabled by Liquid Metal Fillers.: Develops a flexible, stretchable strain sensor using indium-based liquid metal fillers, targeting applications in wearable electronics ( Choe et al., 2022).

  • A smelting-rolling strategy for ZnIn bulk phase alloy anodes.: Describes a novel processing technique for zinc-indium alloy anodes that enhances electrochemical performance and durability in batteries ( Chai et al., 2022).

  • In-MOF-Derived Hierarchically Hollow Carbon Nanostraws for Advanced Zinc-Iodine Batteries.: Presents a method to fabricate hierarchically hollow carbon nanostructures from indium-based metal-organic frameworks, improving the energy storage capacity of zinc-iodine batteries ( Chai et al., 2022).

Pictogramas

Health hazard
GHS08

Palavra indicadora

Danger

Frases de perigo

H372

Declarações de precaução

P260 - P264 - P270 - P314 - P501

Classificações de perigo

STOT RE 1 Inhalation

Órgãos-alvo

Lungs

Código de classe de armazenamento

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

Classe de risco de água (WGK)

WGK 1

Ponto de fulgor (°F)

Not applicable

Ponto de fulgor (°C)

Not applicable

Equipamento de proteção individual

dust mask type N95 (US), Eyeshields, Gloves

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Certificados de análise (COA)

Lot/Batch Number
MKCF3360
MKCD6793
MKCD3842
MKBZ6977V
MKBW4318V

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Indium (In) standard solution

Ching-Hwa Ho et al.
ACS applied materials & interfaces, 5(6), 2269-2277 (2013-03-05)
The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-In2Se3 hexagonal microplates has been explored. Hexagonal α-In2Se3 microplates with the sizes of 10s to 100s of micrometers were synthesized and prepared by the chemical vapor transport method
Juan Zhou et al.
Chemical communications (Cambridge, England), 49(22), 2237-2239 (2013-02-12)
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible light H(2) production activity in the absence of noble metal cocatalysts.
Annick Bay et al.
Optics express, 21 Suppl 1, A179-A189 (2013-02-15)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. The layer
Han-Youl Ryu et al.
Optics express, 21 Suppl 1, A190-A200 (2013-02-15)
We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical simulations. The electrical efficiency (EE) and the internal quantum efficiency (IQE) are
Ray-Hua Horng et al.
Optics express, 21 Suppl 1, A1-A6 (2013-02-15)
A wing-type imbedded electrodes was introduced into the lateral light emitting diode configuration (WTIE-LEDs) to reduce the effect of light shading of electrode in conventional sapphire-based LEDs (CSB-LEDs). The WTIE-LEDs with double-side roughened surface structures not only can eliminate the
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