455199

Tetrakis(dimethylamido)hafnium(IV)

≥99.99%

• Synonym(e): TDMAH, Tetrakis-(dimethylamino)-hafnium(IV)
• Lineare Formel: [(CH₃)₂N]₄Hf
• CAS-Nummer: 19782-68-4
• Molekulargewicht: 354.79
• MDL-Nummer: MFCD01862473
• UNSPSC-Code: 12352103
• PubChem Substanz-ID: 24869038
• NACRES: NA.23

Eigenschaften

• Qualitätsniveau: 100
• Assay: ≥99.99%
• Form: low-melting solid
• Eignung der Reaktion: core: hafnium
• mp (Schmelzpunkt): 26-29 °C (lit.)
• Dichte: 1.098 g/mL at 25 °C
• SMILES String: CN(C)[Hf](N(C)C)(N(C)C)N(C)C
• InChI: 1S/4C2H6N.Hf/c4*1-3-2;/h4*1-2H3;/q4*-1;+4
• InChIKey: ZYLGGWPMIDHSEZ-UHFFFAOYSA-N

Beschreibung

Allgemeine Beschreibung

Tetrakis(dimethylamido)hafnium(IV) is an organometallic compound consisting of a central hafnium atom (Hf) surrounded by four dimethylamido ligands (NMe₂). It is commonly used as a CVD/ALD precursor to produce high-quality Hf thin films. It is a solid with low melting point.

Anwendung

Tetrakis(dimethylamido)hafnium(IV) can be used:

• As an atomic layer deposition(ALD) precursor for deposition of hafnium oxide thin films for advanced semiconductor devices.
• As a precursor to fabricate polymer-derived ceramic nanocomposites.
• To prepare HfO₂, CeO₂, and Ce-doped HfO₂ thin films on Ge substrates by using tris(isopropyl-cyclopentadienyl)cerium [Ce(iPrCp)₃] precursors with H₂O via ALD method.
• To produce Hf₃N₄ thin films with TDMAH and ammonia at low substrate temperatures at 150−250 °C.

Hinweis zur Analyse

Purity excludes ~2000 ppm Zr.

Sicherheitshinweise

• Piktogramme: GHS02,GHS05
• Signalwort: Danger
• H-Sätze: H228,H261,H314
• P-Sätze: P210 - P231 + P232 - P280 - P305 + P351 + P338 - P310 - P422
• Gefahreneinstufungen: Flam. Sol. 1 - Skin Corr. 1B - Water-react 2
• Zusätzliche Gefahrenhinweise: EUH014
• Lagerklassenschlüssel: 4.3 - Hazardous materials which set free flammable gases upon contact with water
• WGK: WGK 3
• Persönliche Schutzausrüstung: Eyeshields, Faceshields, Gloves, type P3 (EN 143) respirator cartridges