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Wichtige Dokumente
287717
Boranammoniak-Komplex
technical grade, 90%
Synonym(e):
Amin-Trihydrobor, Borazan
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About This Item
Empfohlene Produkte
Qualität
technical grade
Qualitätsniveau
Assay
90%
Form
solid
Eignung der Reaktion
reagent type: reductant
Grünere Alternativprodukt-Eigenschaften
Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.
sustainability
Greener Alternative Product
Grünere Alternativprodukt-Kategorie
SMILES String
B.N
InChI
1S/BH3.H3N/h2*1H3
InChIKey
WZMUUWMLOCZETI-UHFFFAOYSA-N
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Verwandte Kategorien
Allgemeine Beschreibung
Ammonia borane, also known as borazane has high hydrogen content (about 20% mass). Thermal decomposition of borazane takes place in the temperature range of 350-410K accompanied by hydrogen release and heat evolution. It may find use as a hydrogen source in fuel cells in the future.
Borane-ammonia complex is a novel material, where ammonia is tightly bound to a ligand through all four of its atoms. It is a donor-acceptor complex that is formed by electron donation from a Lewis base (NH3) to a Lewis acid (BH3). It shows a B-N bond distance of 1.564 Å.
We are committed to bringing you Greener Alternative Products, which adhere to one or more of The 12 Principles of Greener Chemistry. This product has been enhanced for energy efficiency. Find details here.
Anwendung
Mild, efficient, and stereoselective reducing agent for aldehydes and ketones in protic or nonprotic media.
Lagerklassenschlüssel
11 - Combustible Solids
WGK
WGK 3
Persönliche Schutzausrüstung
Eyeshields, Gloves
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International Journal of Hydrogen Energy, 36, 10870-10870 (2011)
Tetrahedron Letters, 693-693 (1980)
Journal of the American Chemical Society, 133(42), 17093-17099 (2011-10-04)
Studies of the activating effect of Verkade's base, 2,8,9-triisobutyl-2,5,8,9-tetraaza-1-phosphabicyclo[3.3.3]undecane (VB), on the rate and extent of H(2) release from ammonia borane (AB) have led to the syntheses and structural characterizations of three anionic aminoborane chain-growth products that provide direct support
Tetrahedron, 67, 7121-7127 (2011)
ACS nano, 6(6), 5234-5241 (2012-05-02)
Hexagonal boron nitride (h-BN) is a promising dielectric material for graphene-based electronic devices. Here we investigate the potential of h-BN gate dielectrics, grown by chemical vapor deposition (CVD), for integration with quasi-freestanding epitaxial graphene (QFEG). We discuss the large scale
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