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767638

Sigma-Aldrich

Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene

sublimed grade, 99%

Synonyme(s) :

DNTT, Naphtho[2,3-b]naphtho[2′,3′:4,5]thieno[2,3-d]thiophene

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About This Item

Formule empirique (notation de Hill):
C22H12S2
Numéro CAS:
Poids moléculaire :
340.46
Numéro MDL:
Code UNSPSC :
12352103
ID de substance PubChem :
Nomenclature NACRES :
NA.23

Qualité

sublimed grade

Niveau de qualité

Pureté

99%

Forme

powder or crystals

Pf

425-430 °C

Propriétés du semi-conducteur

P-type (mobility=2 cm2/V·s)

Chaîne SMILES 

c1ccc2cc3c(cc2c1)sc4c5cc6ccccc6cc5sc34

InChI

1S/C22H12S2/c1-3-7-15-11-19-17(9-13(15)5-1)21-22(23-19)18-10-14-6-2-4-8-16(14)12-20(18)24-21/h1-12H

Clé InChI

CZWHMRTTWFJMBC-UHFFFAOYSA-N

Description générale

Dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) is a semiconducting polymer that has π-extended heteroarenes with six fused aromatic rings. It is a thermally stable crystal that has a hole mobility of 1 cm2V-1s-1 which can be used for a majority of electronic applications.

Application

It is mainly used as an organic semiconductor in the fabrication of organic field effect transistors (OFETs) for a variety of applications such as implantable electronics, large-area sensitive catheters, and light emitting diodes (LEDs).
Organic Field Effect Transistor (OFET) Materials; p-Type Organic Semiconductors; p-Type Small Molecules; sublimed grade materials

Informations légales

Product of Nippon Kayaku

Pictogrammes

Exclamation mark

Mention d'avertissement

Warning

Mentions de danger

Classification des risques

Acute Tox. 4 Oral - Eye Irrit. 2

Code de la classe de stockage

11 - Combustible Solids

Classe de danger pour l'eau (WGK)

WGK 3

Point d'éclair (°F)

Not applicable

Point d'éclair (°C)

Not applicable


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Consulter la Bibliothèque de documents

Facile synthesis of highly pi-extended heteroarenes, dinaphtho [2, 3-b: 2 `, 3 `-f] chalcogenopheno [3, 2-b] chalcogenophenes, and their application to field-effect transistors
Yamamoto T and Takimiya K
Journal of the American Chemical Society, 129(8), 2224-2225 (2007)
Contact Doping and Ultrathin Gate Dielectrics for Nanoscale Organic Thin-Film Transistors
Ante F, et al.
Small, 7(9), 1186-1191 (2011)
Martin Kaltenbrunner et al.
Nature, 499(7459), 458-463 (2013-07-28)
Electronic devices have advanced from their heavy, bulky origins to become smart, mobile appliances. Nevertheless, they remain rigid, which precludes their intimate integration into everyday life. Flexible, textile and stretchable electronics are emerging research areas and may yield mainstream technologies.
Organic transistors with high thermal stability for medical applications
Kuribara K, et al.
Nature Communications, 3(29), 723-723 (2012)
Bias and related stress effects in organic thin film transistors based on dinaphtho [2, 3-b: 2?, 3?-f] thieno [3, 2-b] thiophene (DNTT)
Za'aba NK and Taylor DM
Organic Electronics, 62(8), 382-393 (2018)

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Sublimed materials for organic electronic devices such of OFETs and OTFTs allow the achievement of better electronic properties, and may help increase a device’s lifetime.

Intrinsically stretchable active layers for organic field-effect transistors (OFET) are discussed. Polymer structural modification & post-polymerization modifications are 2 methods to achieve this.

There is widespread demand for thin, lightweight, and flexible electronic devices such as displays, sensors, actuators, and radio-frequency identification tags (RFIDs). Flexibility is necessary for scalability, portability, and mechanical robustness.

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