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647705

Silicon

Name: Silicon
Brand: ALDRICH

wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm

Sinónimos:

Silicon element

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About This Item

Fórmula lineal:

Si

Número de CAS:

7440-21-3

Peso molecular:

28.09

MDL number:

MFCD00085311

UNSPSC Code:

12352300

PubChem Substance ID:

24883420

NACRES:

NA.23

form

crystalline (cubic (a = 5.4037))
wafer

Quality Level

100

contains

boron as dopant

diam. × thickness

2 in. × 0.3 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

semiconductor properties

<111>, P-type

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Categorías relacionadas

Componentes electrónicos prefabricados y sustratos

Physical properties

0 vortex defects. Etch pitch density (EPD) < 100 (cm^-2). Resistivity 10^-3- 40Ωcm

Oxygen content: <= 1~1.8 x 10¹⁸/cm³; Carbon content: <= 5 x 10¹⁶/cm³; Boule diameter: 1~8 ″

Storage Class

13 - Non Combustible Solids

wgk_germany

WGK 2

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

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Numerical simulation and fabrication of silicon sheet via spin casting.

Jaewoo Lee et al.

Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)

A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of

Thin film solar cells with Si nanocrystallites embedded in amorphous intrinsic layers by hot-wire chemical vapor deposition.

Seungil Park et al.

Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)

We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.

Study of the microstructures and lifetime of spin-cast silicon sheets for photovoltaics.

Hyunhui Kim et al.

Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)

Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image

Porous silicon platform for optical detection of functionalized magnetic particles biosensing.

Pil Ju Ko et al.

Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)

The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon

Si-nanowire-array-based NOT-logic circuits constructed on plastic substrates using top-down methods.

Youngin Jeon et al.

Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)

Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on

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