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647101

Silicon

Name: Silicon
Brand: ALDRICH

wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

Sinónimos:

Silicon element

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About This Item

Fórmula lineal:

Número de CAS:

7440-21-3

Peso molecular:

28.09

EC Number:

231-130-8

MDL number:

MFCD00085311

UNSPSC Code:

12352300

PubChem Substance ID:

24883508

NACRES:

NA.23

form

crystalline (cubic (a = 5.4037))
wafer (single side polished)

Quality Level

100

does not contain

dopant

diam. × thickness

2 in. × 0.5 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

semiconductor properties

<111>, N-type

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Categorías relacionadas

Componentes electrónicos prefabricados y sustratos

Application

Silicon Photonics and Electronics: Discusses the integration of silicon photonics with electronics, relevant for developing high-performance computational devices, pertinent to material science and high-performance computing research (C Xiang et al., 2021).

Silicon Silicon pi Single Bond: Details the structural chemistry of silicon and its implications in molecular and material sciences, useful for chemists interested in silicon′s applications in nanotechnology and materials science (S Kyushin et al., 2020).

Physical properties

0 vortex defects. Etch pitch density (EPD) < 100 (cm^-2). Resistivity 100 - 3000 Ωcm.

Oxygen content: ≤ 1~1.8 x 10¹⁸ /cm³; Carbon content: ≤ 5 x 10¹⁶ /cm³; Boule diameter: 1~8 ″

Storage Class

13 - Non Combustible Solids

wgk_germany

nwg

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

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Numerical simulation and fabrication of silicon sheet via spin casting.

Jaewoo Lee et al.

Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)

A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of

Thin film solar cells with Si nanocrystallites embedded in amorphous intrinsic layers by hot-wire chemical vapor deposition.

Seungil Park et al.

Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)

We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.

Study of the microstructures and lifetime of spin-cast silicon sheets for photovoltaics.

Hyunhui Kim et al.

Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)

Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image

Si-nanowire-array-based NOT-logic circuits constructed on plastic substrates using top-down methods.

Youngin Jeon et al.

Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)

Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on

Structural characteristics of ternary In(x)Ga(1-x)As nanowires on Si (111) grown via Au-catalyzed VLS.

Jae Cheol Shin et al.

Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)

We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW

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