287717
Borane-ammonia complex
technical grade, 90%
Sinónimos:
Amminetrihydroboron, Borazane
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About This Item
Fórmula lineal:
H3N · BH3
Número de CAS:
Peso molecular:
30.87
MDL number:
UNSPSC Code:
26111700
PubChem Substance ID:
NACRES:
NA.22
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grade
technical grade
assay
90%
form
solid
reaction suitability
reagent type: reductant
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SMILES string
B.N
InChI
1S/BH3.H3N/h2*1H3
InChI key
WZMUUWMLOCZETI-UHFFFAOYSA-N
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General description
Ammonia borane, also known as borazane has high hydrogen content (about 20% mass). Thermal decomposition of borazane takes place in the temperature range of 350-410K accompanied by hydrogen release and heat evolution. It may find use as a hydrogen source in fuel cells in the future.
Borane-ammonia complex is a novel material, where ammonia is tightly bound to a ligand through all four of its atoms. It is a donor-acceptor complex that is formed by electron donation from a Lewis base (NH3) to a Lewis acid (BH3). It shows a B-N bond distance of 1.564 Å.
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Application
Borazane acts as a mild, efficient, and stereoselective reducing agent for aldehydes and ketones in protic or nonprotic media.It can be used as a storage medium for release of hydrogenBorazane is popularly used as an ammonia borane (AB) source for the formation of hexagonal boron nitride monolayers which are used as a substrate for graphene growth.
Storage Class
11 - Combustible Solids
wgk_germany
WGK 3
ppe
Eyeshields, Gloves
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Los clientes también vieron
Weng, B.; et al.
International Journal of Hydrogen Energy, 36, 10870-10870 (2011)
Tetrahedron Letters, 693-693 (1980)
William C Ewing et al.
Journal of the American Chemical Society, 133(42), 17093-17099 (2011-10-04)
Studies of the activating effect of Verkade's base, 2,8,9-triisobutyl-2,5,8,9-tetraaza-1-phosphabicyclo[3.3.3]undecane (VB), on the rate and extent of H(2) release from ammonia borane (AB) have led to the syntheses and structural characterizations of three anionic aminoborane chain-growth products that provide direct support
X. Yang, et al.,
Tetrahedron, 67, 7121-7127 (2011)
Michael S Bresnehan et al.
ACS nano, 6(6), 5234-5241 (2012-05-02)
Hexagonal boron nitride (h-BN) is a promising dielectric material for graphene-based electronic devices. Here we investigate the potential of h-BN gate dielectrics, grown by chemical vapor deposition (CVD), for integration with quasi-freestanding epitaxial graphene (QFEG). We discuss the large scale
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