- Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition.
Low temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition.
Dalton transactions (Cambridge, England : 2003) (2017-11-22)
Richard O'Donoghue, Julian Rechmann, Morteza Aghaee, Detlef Rogalla, Hans-Werner Becker, Mariadriana Creatore, Andreas Dirk Wieck, Anjana Devi
PMID29160880
ABSTRACT
Herein we describe an efficient low temperature (60-160 °C) plasma enhanced atomic layer deposition (PEALD) process for gallium oxide (Ga
MATERIALS