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Merck

M0753

Sigma-Aldrich

氧化钼(VI)

ReagentPlus®, ≥99.5%

别名:

三氧化钼

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About This Item

线性分子式:
MoO3
CAS号:
分子量:
143.94
EC號碼:
MDL號碼:
分類程式碼代碼:
12352303
PubChem物質ID:
NACRES:
NA.55

品質等級

產品線

ReagentPlus®

化驗

≥99.5%

形狀

crystals

反應適用性

reagent type: catalyst
core: molybdenum

mp

795 °C (lit.)

正離子痕跡

NH4+: ≤0.02%

SMILES 字串

O=[Mo](=O)=O

InChI

1S/Mo.3O

InChI 密鑰

JKQOBWVOAYFWKG-UHFFFAOYSA-N

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應用

LAMOX 快离子导体和超导体的前体。
用于固态合成显著的三元还原氧化钼,Pr4Mo9018,其结构包含以前未知的Mo7、Mo13和Mo9结构簇。新的集合结构产品是一种小带隙半导体。

法律資訊

ReagentPlus is a registered trademark of Merck KGaA, Darmstadt, Germany

象形圖

Health hazardExclamation mark

訊號詞

Warning

危險聲明

危險分類

Carc. 2 - Eye Irrit. 2 - STOT SE 3

標靶器官

Respiratory system

儲存類別代碼

11 - Combustible Solids

水污染物質分類(WGK)

WGK 1

閃點(°F)

Not applicable

閃點(°C)

Not applicable


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Patrick R Brown et al.
Nano letters, 11(7), 2955-2961 (2011-06-15)
The ability to engineer interfacial energy offsets in photovoltaic devices is one of the keys to their optimization. Here, we demonstrate that improvements in power conversion efficiency may be attained for ZnO/PbS heterojunction quantum dot photovoltaics through the incorporation of
Seiichiro Murase et al.
Advanced materials (Deerfield Beach, Fla.), 24(18), 2459-2462 (2012-04-11)
An MoO(3) film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO(3) anode buffer layer is comparable to
Design of transparent anodes for resonant cavity enhanced light harvesting in organic solar cells.
Nicholas P Sergeant et al.
Advanced materials (Deerfield Beach, Fla.), 24(6), 728-732 (2012-01-04)
Claudio Girotto et al.
ACS applied materials & interfaces, 3(9), 3244-3247 (2011-08-13)
We report on a sol-gel-based technique to fabricate MoO(3) thin films as a hole-injection layer for solution-processed or thermally evaporated organic solar cells. The solution-processed MoO(3) (sMoO(3)) films are demonstrated to have equal performance to hole-injection layers composed of either
Yu-Zhan Wang et al.
The Journal of chemical physics, 134(3), 034706-034706 (2011-01-26)
The electronic structures at the MoO(3)∕Co interface were investigated using synchrotron-based ultraviolet and x-ray photoelectron spectroscopy. It was found that interfacial chemical reactions lead to the reduction of Mo oxidation states and the formation of Co-O bonds. These interfacial chemical

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