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品質等級
化驗
99.9% trace metals basis
形狀
powder
mp
800 °C (lit.)
SMILES 字串
N#[Ga]
InChI
1S/Ga.N
InChI 密鑰
JMASRVWKEDWRBT-UHFFFAOYSA-N
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應用
氮化镓（GaN）是一种宽带隙半导体材料，可用于各种电子器件的开发，如发光二极管（LED）和场效应晶体管（FET）。它还可用作基于自旋电子学应用的过渡金属掺杂剂。
訊號詞
Warning
危險聲明
危險分類
Skin Sens. 1
儲存類別代碼
11 - Combustible Solids
水污染物質分類（WGK）
WGK 3
閃點（°F）
Not applicable
閃點（°C）
Not applicable
個人防護裝備
Eyeshields, Faceshields, Gloves, type N95 (US)
Sanjay Sankaranarayanan et al.
ACS omega, 4(12), 14772-14779 (2019-09-26)
Growth of gallium nitride nanowires on etched sapphire and GaN substrates using binary catalytic alloy were investigated by manipulating the growth time and precursor-to-substrate distance. The variations in behavior at different growth conditions were observed using X-ray diffractometer, Raman spectroscopy
Fabrizio Gaulandris et al.
Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada, 26(1), 3-17 (2020-01-21)
One of the biggest challenges for in situ heating transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) is the ability to measure the local temperature of the specimen accurately. Despite technological improvements in the construction of TEM/STEM heating
商品
Conducting polymers such as polyaniline, polythiophene and polyfluorenes are now much in the spotlight for their applications in organic electronics and optoelectronics.
Global Trade Item Number
| 货号 | GTIN |
|---|---|
| 481769-50G | 4061832388762 |
| 481769-10G | 4061832388755 |
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